Panasonic XN04381 Datasheet
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN4381
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
Features
■
●
Two elements incorporated into one package.
(Transistors with built-in resistor)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
UN1213 × UN1122
Unit: mm
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Tr1
Collector to emitter voltage
Collector current I
Collector to base voltage
Collector to emitter voltage
Tr2
Collector current I
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
C
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V
100 mA
–50 V
–50 V
–500 mA
300 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: CW
Internal Connection
Tr1
6
5
43
Tr2
1
2
1
Composite Transistors XN4381
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
I
I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
V
Output voltage high level V
Output voltage low level V
Transition frequency f
Input resistance R
Resistance ratio R1/R
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
I
I
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
V
Output voltage high level V
Output voltage low level V
Transition frequency f
Input resistance R
Resistance ratio R1/R
CBO
CEO
CBO
CEO
EBO
FE
CE(sat)
OH
OL
T
1
2
CBO
CEO
CBO
CEO
EBO
FE
CE(sat)
OH
OL
T
1
2
IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.1 mA
VCE = 10V, IC = 5mA 80
IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 3.5V, RL = 1kΩ 0.2 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
–30% 47 +30% kΩ
0.8 1.0 1.2
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCB = –50V, IE = 0 –1 µA
VCE = –50V, IB = 0 –1 µA
VEB = –6V, IC = 0 –2 mA
VCE = –10V, IC = –100mA 50
IC = –100mA, IB = –5mA – 0.25 V
VCC = –5V, VB = – 0.5V, RL = 500Ω –4.9 V
VCC = –5V, VB = –3.5V, RL = 500Ω – 0.2 V
VCB = –10V, IE = 50mA, f = 200MHz
200 MHz
–30% 4.7 +30% kΩ
0.8 1.0 1.2
2
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