Panasonic XN04311 Datasheet

Composite Transistors
2.8
+0.2 –0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25 –0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN4311
Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
Features
Two elements incorporated into one package. (Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UN1211+UN1111
Unit: mm
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage
Tr1
Collector to emitter voltage Collector current I Collector to base voltage Collector to emitter voltage
Tr2
Collector current I Total power dissipation Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
C
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V 100 mA –50 V –50 V
–100 mA
300 mW 150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2) 2 : Base (Tr2) 5 : Base (Tr1) 3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74 Mini Type Package (6–pin)
Marking Symbol: 7X
Internal Connection
Tr1
6
5
43
Tr2
1
2
1
Composite Transistors XN4311
Electrical Characteristics (Ta=25˚C)
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V
Collector cutoff current
I
I Emitter cutoff current I Forward current transfer ratio h Collector to emitter saturation voltage
V Output voltage high level V Output voltage low level V Transition frequency f Input resistance R Resistance ratio R1/R
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V
Collector cutoff current
I
I Emitter cutoff current I Forward current transfer ratio h Collector to emitter saturation voltage
V Output voltage high level V Output voltage low level V Transition frequency f Input resistance R Resistance ratio R1/R
CBO
CEO
CBO
CEO
EBO
FE
CE(sat)
OH
OL
T
1
2
CBO
CEO
CBO
CEO
EBO
FE
CE(sat)
OH
OL
T
1
2
IC = 10µA, IE = 0 50 V IC = 2mA, IB = 0 50 V VCB = 50V, IE = 0 0.1 µA VCE = 50V, IB = 0 0.5 µA VEB = 6V, IC = 0 0.5 mA VCE = 10V, IC = 5mA 35 IC = 10mA, IB = 0.3mA 0.25 V VCC = 5V, VB = 0.5V, RL = 1k 4.9 V VCC = 5V, VB = 2.5V, RL = 1k 0.2 V VCB = 10V, IE = –1mA, f = 200MHz 150 MHz
–30% 10 +30% k
0.8 1.0 1.2
IC = –10µA, IE = 0 –50 V IC = –2mA, IB = 0 –50 V VCB = –50V, IE = 0 – 0.1 µA VCE = –50V, IB = 0 – 0.5 µA VEB = –6V, IC = 0 – 0.5 mA VCE = –10V, IC = –5mA 35 IC = –10mA, IB = – 0.3mA – 0.25 V VCC = –5V, VB = –0.5V, RL = 1k –4.9 V VCC = –5V, VB = –2.5V, RL = 1k – 0.2 V VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
–30% 10 +30% k
0.8 1.0 1.2
2
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