Panasonic XN0421N Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN421N

Silicon NPN epitaxial planer transistor

For switching/digital circuits

Features

■

●

Two elements incorporated into one package.
(Transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

UN221N × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Collector to base voltage
Collector to emitter voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CEO

C

P

T

T

j

T

stg

50 V

50 V
100 mA
300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: FK

Internal Connection

6

5

Tr1

1

2

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

43

Tr2

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V

Collector cutoff current

Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Input resistance R
Resistance ratio R1/R
Transition frequency f

I
I

V

CBO

CEO

EBO

FE

T

CBO

CEO

CE(sat)

OH

OL

1

2

IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.2 mA
VCE = 10V, IC = 5mA 80 400
IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V

–30% 4.7 +30% kΩ

0.1

VCB = 10V, IE = –2mA, f = 200MHz 150 MHz

1

Composite Transistors XN421N

PT — Ta

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

)

— V

I

C

160

140

)

120

mA

(

C

100

80

60

40

Collector current I

20

0

012210486

Collector to emitter voltage VCE (V

Cob — V

6

)
pF

(

5

ob

4

CE

CB

Ta=25˚C

IB=1.0mA

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

f=1MHz

=0

I

E

Ta=25˚C

V

10

)

V

(

CE(sat)

0.1

— I

CE(sat)

1

Ta=75˚C

25˚C

–25˚C

C

IC/IB=10

480

FE

400

320

240

160

80

Forward current transfer ratio h

25˚C

hFE — I

Ta=75˚C

–25˚C

C

VCE=10V

Collector to emitter saturation voltage V

0.01
1

)

10000

)

1000

µA

(

O

10 100 1000

Collector current IC (mA

IO — V

IN

VO=5V
Ta=25˚C

)

0

1

10 100 1000

Collector current IC (mA

VIN — I

100

)

10

V

(

IN

)

O

VO=0.2V
Ta=25˚C

3

2

1

Collector output capacitance C

0

1

10 100

Collector to base voltage VCB (V

2

100

10

Output current I

1

0.4

)

Input voltage VIN (V

1.41.210.80.6

)

1

Input voltage V

0.1

0.01

0.1

Output current IO (mA

1 10 100

)