Panasonic XN0421L Datasheet

Composite Transistors
2.8
+0.2 –0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25 –0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN421L
Silicon NPN epitaxial planer transistor
For switching/digital circuits
Features
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
UN121L × 2 elements
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Rating of element
Overall
Collector to base voltage Collector to emitter voltage Collector current I Total power dissipation Junction temperature Storage temperature
V
CBO
V
CEO
C
P
T
T
j
T
stg
50 V
50 V 100 mA 300 mW 150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2) 2 : Base (Tr2) 5 : Base (Tr1) 3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74 Mini Type Package (6–pin)
Marking Symbol: DI
Internal Connection
6
5
Tr1
1
2
Unit: mm
Electrical Characteristics (Ta=25˚C)
43
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I Forward current transfer ratio h Collector to emitter saturation voltage Output voltage high level V Output voltage low level V Input resistance R Resistance ratio R1/R Transition frequency f
I I
V
CBO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
OH
OL
1
2
IC = 10µA, IE = 0 50 V IC = 2mA, IB = 0 50 V VCB = 50V, IE = 0 0.1 µA VCE = 50V, IB = 0 0.5 µA VEB = 6V, IC = 0 2.0 mA VCE = 10V, IC = 5mA 20 IC = 10mA, IB = 0.3mA 0.25 V VCC = 5V, VB = 0.5V, RL = 1k 4.9 V VCC = 5V, VB = 2.5V, RL = 1k 0.2 V
–30% 4.7 +30% k
0.8 1.0 1.2
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
1
Composite Transistors XN421L
PT — Ta
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
)
— V
I
C
240
200
) mA
(
160
C
120
80
Collector current I
40
0
012210486
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
CE
CB
Ta=25˚C
IB=1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
f=1MHz
=0
I
E
Ta=25˚C
V
100
)
V
(
CE(sat)
10
0.1
— I
CE(sat)
1
Ta=75˚C
25˚C
–25˚C
C
IC/IB=10
240
FE
200
160
120
80
40
Forward current transfer ratio h
hFE — I
Ta=75˚C
25˚C
C
VCE=10V
–25˚C
Collector to emitter saturation voltage V
0.01 13
)
100
)
10
V
(
IN
10 30 100 300 1000
Collector current IC (mA
IO — V
IN
VO=0.2V Ta=25˚C
)
0
13
10 30 100 300 1000
Collector current IC (mA
)
3
2
1
Collector output capacitance C
0
3 10 30 100
1
Collector to base voltage VCB (V
2
1
Input voltage V
0.1
0.01
0.1 0.3
)
1 3 10 30 100
Output current IO (mA
)
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