Panasonic XN0421L Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN421L

Silicon NPN epitaxial planer transistor

For switching/digital circuits

Features

■

●

Two elements incorporated into one package.
(Transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

UN121L × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Collector to base voltage
Collector to emitter voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CEO

C

P

T

T

j

T

stg

50 V

50 V
100 mA
300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: DI

Internal Connection

6

5

Tr1

1

2

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

43

Tr2

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V

Collector cutoff current

Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Input resistance R
Resistance ratio R1/R
Transition frequency f

I
I

V

CBO

CEO

EBO

FE

T

CBO

CEO

CE(sat)

OH

OL

1

2

IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 2.0 mA
VCE = 10V, IC = 5mA 20
IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V

–30% 4.7 +30% kΩ

0.8 1.0 1.2

VCB = 10V, IE = –2mA, f = 200MHz 150 MHz

1

Composite Transistors XN421L

PT — Ta

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

)

— V

I

C

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

012210486

Collector to emitter voltage VCE (V

Cob — V

6

)
pF

(

5

ob

4

CE

CB

Ta=25˚C

IB=1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

f=1MHz

=0

I

E

Ta=25˚C

V

100

)

V

(

CE(sat)

10

0.1

— I

CE(sat)

1

Ta=75˚C

25˚C

–25˚C

C

IC/IB=10

240

FE

200

160

120

80

40

Forward current transfer ratio h

hFE — I

Ta=75˚C

25˚C

C

VCE=10V

–25˚C

Collector to emitter saturation voltage V

0.01
13

)

100

)

10

V

(

IN

10 30 100 300 1000

Collector current IC (mA

IO — V

IN

VO=0.2V
Ta=25˚C

)

0

13

10 30 100 300 1000

Collector current IC (mA

)

3

2

1

Collector output capacitance C

0

3 10 30 100

1

Collector to base voltage VCB (V

2

1

Input voltage V

0.1

0.01

0.1 0.3

)

1 3 10 30 100

Output current IO (mA

)