Panasonic XN04214 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN4214

Silicon NPN epitaxial planer transistor

For switching/digital circuits

Features

■

●

Two elements incorporated into one package.
(Transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

UN1214 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Collector to base voltage
Collector to emitter voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CEO

C

P

T

T

j

T

stg

50 V

50 V
100 mA
300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: BR

Internal Connection

6

5

Tr1

1

2

Unit: mm

Electrical Characteristics (Ta=25˚C)

■

43

Tr2

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V

Collector cutoff current

Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Output voltage high level V
Output voltage low level V
Transition frequency f
Input resistance R
Resistance ratio R1/R

I
I

V

CBO

CEO

EBO

FE

T

CBO

CEO

CE(sat)

OH

OL

1

2

IC = 10µA, IE = 0 50 V
IC = 2mA, IB = 0 50 V
VCB = 50V, IE = 0 0.1 µA
VCE = 50V, IB = 0 0.5 µA
VEB = 6V, IC = 0 0.2 mA
VCE = 10V, IC = 5mA 80
IC = 10mA, IB = 0.3mA 0.25 V
VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V
VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz

–30% 10 +30% kΩ

0.17 0.21 0.25

1

Composite Transistors XN4214

PT — Ta

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

)

— V

I

C

160

140

)

120

mA

(

C

100

80

60

40

Collector current I

20

0

012210486

Collector to emitter voltage VCE (V

Cob — V

6

)
pF

(

5

ob

4

CE

IB=1.0mA

CB

Ta=25˚C

0.9mA

0.8mA

0.7mA

0.6mA

0.5mA

0.4mA

0.3mA

0.2mA

0.1mA

f=1MHz

=0

I

E

Ta=25˚C

V

— I

CE(sat)

100

)

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

Collector to emitter saturation voltage V

0.01

0.1 0.3

)

Collector current IC (mA

25˚C

–25˚C

1 3 10 30 100

IO — V

10000

3000

)

1000

µA

(

O

300

C

IC/IB=10

Ta=75˚C

400

350

FE

300

250

200

150

100

Forward current transfer ratio h

50

0

13

)

IN

VO=5V
Ta=25˚C

100

30

)

10

V

(

IN

3

hFE — I

10 30 100 300 1000

C

VCE=10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

VIN — I

O

VO=0.2V
Ta=25˚C

)

3

2

1

Collector output capacitance C

0

0.1 0.3

1 3 10 30 100

Collector to base voltage VCB (V

2

100

30

10

Output current I

3

1

0.4

)

Input voltage VIN (V

1.41.21.00.80.6

)

1

0.3

Input voltage V

0.1

0.03

0.01

0.1 0.3

Output current IO (mA

1 3 10 30 100

)