Panasonic XN04130 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN4130

Silicon PNP epitaxial planer transistor

For amplification of low frequency output

Features

■

●

Two elements incorporated into one package.
(Transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

UN1130 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

–15 V
–15 V

–7 V

– 0.5 A

–1 A
300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: OF

Internal Connection

6

5

43

Tr1

Tr2

1

2

Unit: mm

■

Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
Base to emitter resistance R

h
h
V

CBO

FE1

FE2

T

CBO

CEO

EBO

CE(sat)

BE(sat)

ob

BE

IC = –10µA, IE = 0 –15 V
IC = –1mA, IB = 0 –15 V
IE = –1mA, IC = 0 –7 V
VCB = –10V, IE = 0 – 0.1 µA
VCE = –2V, IC = –500mA* 80 280
VCE = –2V, IC = –1A* 50
IC = –300mA, IB = –6mA – 0.2 – 0.3 V
IC = –300mA, IB = –6mA – 0.9 –1.3 V
VCB = –10V, IE = 50mA, f = 200MHz

130 MHz

VCB = –10V, IE = 0, f = 1MHz 22 pF

–30% 10 +30% kΩ

*Pulse measurement

1

Composite Transistors XN4130

PT — Ta hFE — I

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

02040 8060 140120100 160

Ambient temperature Ta (˚C

–100

–87.5

)

–75

mA

(

C

–62.5

–50

IC — V

CE

Ta=25˚C

IB=–1.0mA

–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA

–0.4mA
–0.3mA

V

C

300

FE

250

200

150

100

50

Forward current transfer ratio h

VCE=–10V

Ta=75˚C

25˚C

–25˚C

–10

)

V

(

CE(sat)

–1

–0.1

CE(sat)

Ta=75˚C

–25˚C

— I

C

IC/IB=10

25˚C

Collector to emitter saturation voltage V

0

–1

)

–10000

)

–1000

µA

(

O

–100

–10 –100 –1000

Collector current IC (mA

IO — V

IN

VO=–5V
Ta=25˚C

)

–0.01

–100

)
V

(

IN

–1

–10 –100 –1000

Collector current IC (mA

VIN — I

–10

–1

O

)

VO=–0.2V
Ta=25˚C

–37.5

–25

Collector current I

–12.5

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Cob — V

60

CB

)
pF

(

50

ob

40

30

20

10

Collector output capacitance C

0

–1

–10 –100

Collector to base voltage VCB (V

–0.2mA

–0.1mA

f=1MHz
I

=0

E

Ta=25˚C

Input voltage V

–10

Output current I

–1

–0.4

)

Input voltage VIN (V

–1.4–1.2–1.0–0.8–0.6

)

–0.1

–0.01

–0.1

–1 –10 –100

Output current IO (mA

)

)

2