Composite Transistors
XN1872
Silicon N-channel • Enhancement MOS FET
For switching
Features
■
●
Two elements incorporated into one package.
(Source-coupled FETs)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SK621 × 2 elements
Absolute Maximum Ratings (Ta=25˚C) 1 : Drain (Tr1) 4 : Source
■
Parameter Symbol Ratings Unit
Drain to source voltage
Rating
Gate to source voltage
of
element
Drain current
Total power dissipation
Channel temperature
Overall
Storage temperature
V
DSS
V
GSO
I
D
I
DM
P
T
T
ch
T
stg
50 V
100 mA
200 mA
300 mW
150 ˚C
–55 to +150 ˚C
8V
2 : Drain (Tr2) 5 : Gate (Tr1)
3 : Gate (Tr2) EIAJ : SC–74A
Marking Symbol: 5U
Internal Connection
4
0.05
+0.2
-
2.9
1.9±0.10.8
3
0.95 0.95
0.1
+0.2
-
1.1
5
4
Unit: mm
+0.2
-
0.3
2.8
+0.25
-
0.05
1.50.65±0.15 0.65±0.15
15
1.45±0.1
2
0.05
+0.1
-
0.3
0.06
+0.1
-
0.16
0.1 to 0.3
0 to 0.1
0.4±0.2
Mini Type Pakage (5–pin)
FET 1
1
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Drain to source voltage V
Drain current I
Gate cutoff current I
Gate threshold voltage V
Drain resistance R
DSS
DSS
GSS
th
DS(on)
Forward transfer admittance | Yfs |I
Output voltage high level V
Output voltage low level V
Input resistance R1+R
Turn-on time t
Turn-off time t
Common source short-circuit input capacitance
*1
Pulse measurement
*2
Resistance ratio R1/R2 = 1/50
OH
OL
2
*2
on
*2
off
C
iss
ID = 100µA, VGS = 0 50 V
VDS = 10V, VGS = 0 10 µA
VGS = 8V, VDS = 0 40 80 µA
ID = 100µA, VDS = V
ID = 20mA, VGS = 5V 50 Ω
= 20mA, VDS = 5V, f = 1kHz 20 30 mS
D
VDS = 5V, VGS = 1V, RL = 200Ω 4.5 V
VDS = 5V, VGS = 5V, RL = 200Ω 1.0 V
*1
VDD = 5V, VGS = 0 to 5V, RL = 200Ω 1.0 µs
VDD = 5V, VGS = 5 to 0V, RL = 200Ω 1.0 µs
VDS = 5V, VGS = 0, f = 1MHz 9 15 pF
32
FET 2
GS
1.5 3.5 V
100 200 kΩ
1
Composite Transistors XN1872
PT — Ta ID — V
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
| Yfs | — V
50
)
mS
(
|
40
fs
30
20
10
Forward transfer admittance |Y
0
0108642
Drain to source voltage VDS (V
DS
VDS=5V
Ta=25˚C
DS
120
100
)
mA
(
D
80
60
40
VGS=6.0V
Drain current I
20
0
)
)
0108642
Drain to source voltage VDS (V
C
, C
— V
iss
oss
)
12
pF
(
oss
, C
10
iss
C
8
6
4
2
Common source short-circuit input capacitance,
Common source short-circuit output capacitance
0
0.1
Drain to source voltage VDS (V
Ta=25˚C
DS
VGS=0
f=1MHz
Ta=25˚C
C
C
ID — V
GS
120
100
VDS=5V
)
mA
(
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
)
iss
oss
1001013030.3
)
80
D
60
40
Drain current I
20
0
0108642
Gate to source voltage VGS (V
R
DS(ON)
120
100
)
Ω
(
80
DS(on)
60
40
Drain resistance R
20
0
0108642
Gate to source voltage VGS (V
— V
Ta=–25˚C
25˚C
75˚C
)
GS
ID=20mA
Ta=75˚C
25˚C
–25˚C
)
1000
300
)
100
V
(
IN
30
10
3
Input voltage V
1
0.3
0.1
0.1 0.3
Output current IO (mA
2
VIN — I
O
VO=1V
Ta=25˚C
1 3 10 30 100
)