Panasonic XN01871 Datasheet

Composite Transistors

XN1871

Silicon N-channel junction FET

For amplification of the low frequency

Features

■

●

Two elements incorporated into one package.
(Soure-coupled FETs)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SK198 × 2 elements

Absolute Maximum Ratings (Ta=25˚C) 1 : Gate (Tr1) 4 : Source

■

Rating
of
element

Overall

Parameter Symbol Ratings Unit

Drain to source voltage
Gate to drain voltage
Drain current I
Gate current I
Total power dissipation
Channel temperature
Storage temperature

V

DSX

V

GDO

D

G

P

T

T

ch

T

stg

30 V

–30 V

20 mA

10 mA
300 mW
150 ˚C

–55 to +150 ˚C

2 : Gate (Tr2) 5 : Drain (Tr1)
3 : Drain (Tr2) EIAJ : SC–74A

Marking Symbol: 5T

Internal Connection

4

0.05

+0.2

-

2.9

1.9±0.10.8
3

0.95 0.95

0.1

+0.2

-

1.1

5

4

Unit: mm

+0.2

-

0.3

2.8

+0.25

-

0.05

1.50.65±0.15 0.65±0.15

15

1.45±0.1

2

0.05

+0.1

-

0.3

0.06

+0.1

-

0.16

0.1 to 0.3

0 to 0.1

0.4±0.2

Mini Type Pakage (5–pin)

FET 1

1

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Drain current I
Gate cutoff current I
Gate to source cutoff voltage V

DSS

GSS

GSC

gm VDS = 10V, ID = 0.5mA, f = 1MHz 4 mS

Mutual conductance

gm VDS = 10V, VGS = 0V, f = 1MHz 4 12 mS
Common source short-circuit input capacitance
Common source reverse transfer capacitance

C

iss

C

rss

Noise voltage NV

32

FET 2

VDS = 10V, VGS = 0 0.5 12 mA
VGS = –30V, VDS = 0 –100 nA
VDS = 10V, ID = 10µA – 0.1 –1.5 V

VDS = 10V, VGS = 0V, f = 1MHz 14 pF
VDS = 10V, VGS = 0V, f = 1MHz 3.5 pF

VDS = 30V, ID = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT

60 mV

1

Composite Transistors XN1871

PT — Ta ID — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

gm — V

20

18

)

16

mS

(

14

m

12

10

8

6

4

Mutual conductance g

2

0
–0.8 –0.6 –0.4 –0.2 0

Gate to source voltage VGS (V

I

DSS

GS

=5.0mA

2.0mA

VDS=10V
Ta=25˚C

DS

8

7

)

6

mA

(

5

D

4

3

Drain current I

2

1

0

012210486

)

Drain to source voltage VDS (V

gm — I

20

18

)

16

mS

(

14

m

12

10

8

6

4

Mutual conductance g

2

0

02468

)

=5.0mA

I

DSS

2.0mA

Drain current ID (mA

Ta=25˚C

VGS=0V

–0.1V

–0.2V

–0.3V
–0.4V

)

D

VDS=10V
Ta=25˚C

)

9.6

8.0

)
mA

(

6.4

D

4.8

3.2

Drain current I

1.6

0
–1.0 0–0.2–0.4–0.6–0.8

)

10

pF

(

oss

, C

iss

8

C

6

4

2

Common source short-circuit input capacitance,

Common source short-circuit output capacitance

0

1

ID — V

GS

VDS=10V

Ta=75˚C

25˚C

–25˚C

Gate to source voltage VGS (V

C

, C

— V

iss

oss

3 10 30 100550220

DS

VGS=–3V
f=1MHz
Ta=25˚C

C

iss

C

oss

Drain to source voltage VDS (V

)

)

C

— V

)
pF

(

5

rss

4

3

2

1

0

1

Common source reverse transfer capacitance C

rss

3 10 30 100550220

Drain to source voltage VDS (V

DS

VGS=3V
f=1MHz
Ta=25˚C

)

2

NF — f

12

10

)
dB

(

8

6

4

Noise figure NF

2

0

10 100 1k 10k

Frequency f (Hz

Rg=500Ω

1kΩ

VDS=10V

=5.2mA

I

D

Ta=25˚C

)

100k