Panasonic XN01509 Datasheet

Composite Transistors
XN1509
Silicon NPN epitaxial planer transistor
For high-frequency amplification
Features
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
2SC4561 × 2 elements
Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Emitter
Rating of element
Overall
Parameter Symbol Ratings Unit
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current I Total power dissipation Junction temperature Storage temperature
V
CBO
V
CEO
V
EBO
C
P
T
T
j
T
stg
50 V 50 V
5V
50 mA 200 mW 150 ˚C
–55 to +150 ˚C
2 : Collector (Tr2) 5 : Base (Tr1) 3 : Base (Tr2) EIAJ : SC–74A
Marking Symbol: AN
Internal Connection
4
0.05
+0.2
-
2.9
1.9±0.10.8 3
0.95 0.95
0.1
+0.2
-
1.1
51
4
Unit: mm
+0.2
-
0.3
2.8
+0.25
-
0.05
1.50.65±0.15 0.65±0.15
15
1.45±0.1
2
0.05
+0.1
-
0.3
0.06
+0.1
-
0.16
0.1 to 0.3
0 to 0.1
0.4±0.2
Mini Type Pakage (5–pin)
Tr1
Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency f Collector output capacitance C
*1
Ratio between 2 elements
CBO
CEO
EBO
I
CBO
I
CEO
FE
hFE (small/large)*1VCE = 10V, IC = 2mA 0.5 0.99 V
CE(sat)
T
ob
32
Tr2
IC = 10µA, IE = 0 50 V IC = 1mA, IB = 0 50 V IE = 10µA, IC = 0 5 V VCB = 10V, IE = 0 0.1 µA VCE = 10V, IB = 0 100 µA VCE = 10V, IC = 2mA 200 500
IC = 10mA, IB = 1mA 0.06 0.3 V VCB = 10V, IE = –2mA, f = 200MHz 250 MHz VCB = 10V, IE = 0, f = 1MHz 1.5 pF
1
Composite Transistors XN1509
PT — Ta IC — V
240
)
200
mW
(
T
160
120
80
40
Total power dissipation P
0
0 16040 12080
Ambient temperature Ta (˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
C
IC/IB=10
CE
120
100
) mA
(
80
C
60
40
Collector current I
20
0
012210486
)
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
400
300
Ta=75˚C
25˚C –25˚C
Ta=25˚C
IB=300µA
250µA 200µA
150µA
100µA
50µA
)
C
VCE=10V
60
50
) mA
(
40
C
30
20
Collector current I
10
0
01.20.2 1.00.4 0.80.6
Base to emitter voltage VBE (V
600
)
500
MHz
(
T
400
300
IC — V
Ta=75˚C –25˚C
fT — I
BE
25˚C
E
VCE=10V
VCB=10V Ta=25˚C
)
0.3 Ta=75˚C
25˚C
0.1
0.03
–25˚C
Collector to emitter saturation voltage V
) pF
(
ob
0.01 13
6
5
4
3
2
1
10 30 100 300 1000
Collector current IC (mA
Cob — V
CB
f=1MHz I
=0
E
Ta=25˚C
)
Collector output capacitance C
0
3 10 30 100
1
Collector to base voltage VCB (V
)
200
100
Forward current transfer ratio h
0
0.1 0.3
1 3 10 30 100
Collector current IC (mA
200
100
Transition frequency f
0
0.1 0.3 1 3 10 30 100
)
Emitter current IE (mA
)
2
Loading...