Panasonic XN01507 Datasheet

Composite Transistors

XN1507

Silicon NPN epitaxial planer transistor

For high break down voltage and low noise amplification

Features

■

●

Two elements incorporated into one package.
(Emitter-coupled transistors)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD814 × 2 elements

Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Emitter

■

Rating
of
element

Overall

Parameter Symbol Ratings Unit

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

150 V
150 V

5V

50 mA
100 mA
300 mW
150 ˚C

–55 to +150 ˚C

2 : Collector (Tr2) 5 : Base (Tr1)
3 : Base (Tr2) EIAJ : SC–74A

Marking Symbol: 4O

Internal Connection

4

0.05

+0.2

-

2.9

1.9±0.10.8
3

0.95 0.95

0.1

+0.2

-

1.1

51

4

32

Unit: mm

+0.2

-

0.3

2.8

+0.25

-

0.05

1.50.65±0.15 0.65±0.15

15

1.45±0.1

2

0.05

+0.1

-

0.3

0.06

+0.1

-

0.16

0.1 to 0.3

0 to 0.1

0.4±0.2

Mini Type Pakage (5–pin)

Tr1

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C

*1

Ratio between 2 elements

CEO

EBO

CBO

FE

hFE (small/large)*1VCE = 5V, IC = 10mA 0.5 0.99
V

CE(sat)

T

ob

IC = 100µA, IB = 0 150 V
IE = 10µA, IC = 0 5 V
VCB = 100V, IE = 0 1 µA
VCE = 5V, IC = 10mA 90 450

IC = 30mA, IB = 3mA 1 V
VCB = 10V, IE = –10mA, f = 200MHz

150 MHz

VCB = 10V, IE = 0, f = 1MHz 2.3 pF

1

Composite Transistors

XN1507

PT — Ta IC — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

V

— I

100

)

V

(

CE(sat)

0.3

0.1

0.03

CE(sat)

30

10

3

1

25˚C

–25˚C

C

Ta=75˚C

Collector to emitter saturation voltage V

0.01

0.1 0.3

1 3 10 30 100

Collector current IC (mA

)

IC/IB=10

)

CE

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

012210486

IB=2.0mA

Collector to emitter voltage VCE (V

hFE — I

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 0.3

1 3 10 30 100

C

VCE=10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

Ta=25˚C

1.8mA

1.6mA

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

)

IC — V

120

100

)

mA

(

C

Collector current I

)

200

Ta=75˚C –25˚C

80

60

40

20

0

0 2.01.61.20.80.4

Base to emitter voltage VBE (V

25˚C

fT — I

BE

E

VCE=10V

VCB=10V
Ta=25˚C

)

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –3 –10

–2

Emitter current IE (mA

–30 –100

–20–5–50

)

)
(

pF

ob

Cob — V

5

4

3

2

1

CB

f=1MHz

=0

I

E

Ta=25˚C

Collector output capacitance C

0

1 3 10 30 100220550

Collector to base voltage VCB (V

2

)