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Composite Transistors
XN1507
Silicon NPN epitaxial planer transistor
For high break down voltage and low noise amplification
Features
■
●
Two elements incorporated into one package.
(Emitter-coupled transistors)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SD814 × 2 elements
Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Emitter
■
Rating
of
element
Overall
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
150 V
150 V
5V
50 mA
100 mA
300 mW
150 ˚C
–55 to +150 ˚C
2 : Collector (Tr2) 5 : Base (Tr1)
3 : Base (Tr2) EIAJ : SC–74A
Marking Symbol: 4O
Internal Connection
4
0.05
+0.2
-
2.9
1.9±0.10.8
3
0.95 0.95
0.1
+0.2
-
1.1
51
4
32
Unit: mm
+0.2
-
0.3
2.8
+0.25
-
0.05
1.50.65±0.15 0.65±0.15
15
1.45±0.1
2
0.05
+0.1
-
0.3
0.06
+0.1
-
0.16
0.1 to 0.3
0 to 0.1
0.4±0.2
Mini Type Pakage (5–pin)
Tr1
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
*1
Ratio between 2 elements
CEO
EBO
CBO
FE
hFE (small/large)*1VCE = 5V, IC = 10mA 0.5 0.99
V
CE(sat)
T
ob
IC = 100µA, IB = 0 150 V
IE = 10µA, IC = 0 5 V
VCB = 100V, IE = 0 1 µA
VCE = 5V, IC = 10mA 90 450
IC = 30mA, IB = 3mA 1 V
VCB = 10V, IE = –10mA, f = 200MHz
150 MHz
VCB = 10V, IE = 0, f = 1MHz 2.3 pF
1
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Composite Transistors
XN1507
PT — Ta IC — V
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
V
— I
100
)
V
(
CE(sat)
0.3
0.1
0.03
CE(sat)
30
10
3
1
25˚C
–25˚C
C
Ta=75˚C
Collector to emitter saturation voltage V
0.01
0.1 0.3
1 3 10 30 100
Collector current IC (mA
)
IC/IB=10
)
CE
120
100
)
mA
(
80
C
60
40
Collector current I
20
0
012210486
IB=2.0mA
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.1 0.3
1 3 10 30 100
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
Ta=25˚C
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
)
IC — V
120
100
)
mA
(
C
Collector current I
)
200
Ta=75˚C –25˚C
80
60
40
20
0
0 2.01.61.20.80.4
Base to emitter voltage VBE (V
25˚C
fT — I
BE
E
VCE=10V
VCB=10V
Ta=25˚C
)
)
160
MHz
(
T
120
80
40
Transition frequency f
0
–1 –3 –10
–2
Emitter current IE (mA
–30 –100
–20–5–50
)
)
(
pF
ob
Cob — V
5
4
3
2
1
CB
f=1MHz
=0
I
E
Ta=25˚C
Collector output capacitance C
0
1 3 10 30 100220550
Collector to base voltage VCB (V
2
)