Panasonic XN01504 Datasheet

Composite Transistors

XN1504

Silicon NPN epitaxial planer transistor

For amplification of low frequency output

Features

■

●

Two elements incorporated into one package.
(Emitter-coupled transistors)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SD1938 × 2 elements

Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Emitter

■

Parameter Symbol Ratings Unit

Collector to base voltage
Collector to emitter voltage

Rating

Emitter to base voltage

of
element

Collector current I
Peak collector current
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

I

CP

P

T

T

j

T

stg

50 V
20 V

25 V
300 mA
500 mA
300 mW
150 ˚C

–55 to +150 ˚C

2 : Collector (Tr2) 5 : Base (Tr1)
3 : Base (Tr2) EIAJ : SC–74A

Marking Symbol: 5S

Internal Connection

4

0.05

+0.2

-

2.9

1.9±0.10.8
3

0.95 0.95

0.1

+0.2

-

1.1

51

4

32

Unit: mm

+0.2

-

0.3

2.8

+0.25

-

0.05

1.50.65±0.15 0.65±0.15

15

1.45±0.1

2

0.05

+0.1

-

0.3

0.06

+0.1

-

0.16

0.1 to 0.3

0 to 0.1

0.4±0.2

Mini Type Pakage (5–pin)

Tr1

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector to emitter voltage V
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Base to emitter voltage V
Transition frequency f
Collector output capacitance C
ON Resistance R

*1

Ratio between 2 elements

*2

Ron test circuit

CEO

CBO

EBO

FE

hFE (small/large)*1VCE = 2V, IC = 4mA 0.5 0.99
V

CE(sat)

BE

T

ob

on

*2

IB=1mA

R

= ✕1000(Ω)

on

IC = 1mA, IB = 0 20 V
VCB = 50V, IE = 0 0.1 µA
VEB = 25V, IC = 0 0.1 µA
VCE = 2V, IC = 4mA 500 2500

IC = 30mA, IB = 3mA 0.1 V
VCE = 2V, IC = 4mA 0.6 V
VCB = 6V, IE = –4mA, f = 200MHz 80 MHz
VCB = 10V, IE = 0, f = 1MHz 7 pF

1.0 Ω

1kΩ

f=1kHz
V=0.3V

V

A

V

VA–V

V

B

V

V

B

B

1

Composite Transistors XN1504

PT — Ta IC — V

500

)

400

mW

(

T

300

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

V

— I

CE(sat)

10

)

V

(

CE(sat)

1

0.1

0.01

Collector to emitter saturation voltage V

0.001

0.1

Ta=75˚C

25˚C

–25˚C

1 10 100

Collector current IC (mA

)

C

IC/IB=10

)

CE

24

20

)
mA

(

16

C

12

8

Collector current I

4

0

012210486

Collector to emitter voltage VCE (V

hFE — I

C

2400

FE

2000

1600

1200

800

400

Forward current transfer ratio h

25˚C

–25˚C

0

13

Ta=75˚C

10 30 100 300 1000

Collector current IC (mA

Ta=25˚C

IB=10µA

9µA
8µA
7µA

6µA
5µA

4µA
3µA

2µA
1µA

VCE=2V

)

IC — V

BE

120

100

)

mA

(

80

C

60

40

Collector current I

20

0

0 1.20.2 1.00.4 0.80.6

)

Ta=75˚C –25˚C

Base to emitter voltage VBE (V

fT — I

120

)

100

MHz

(

T

80

60

40

20

Transition frequency f

0

–3 –10 –30 –100

–1

Emitter current IE (mA

E

25˚C

VCE=2V

VCB=6V
f=200MHz
Ta=25˚C

)

)

)
pF

(

ob

Cob — V

12

10

8

6

4

2

CB

Collector output capacitance C

0

3 10 30 100

1

Collector to base voltage VCB (V

2

f=1MHz
I

=0

E

Ta=25˚C

)