Panasonic XN01501 Datasheet
Composite Transistors
XN1501
Silicon NPN epitaxial planer transistor
For general amplification
Features
■
●
Two elements incorporated into one package.
(Emitter-coupled transistors)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SD601A × 2 elements
Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Emitter
■
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Rating
Emitter to base voltage
of
element
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
60 V
50 V
100 mA
200 mA
300 mW
150 ˚C
–55 to +150 ˚C
7V
2 : Collector (Tr2) 5 : Base (Tr1)
3 : Base (Tr2) EIAJ : SC–74A
Marking Symbol: 5R
Internal Connection
4
0.05
+0.2
-
2.9
1.9±0.10.8
3
0.95 0.95
0.1
+0.2
-
1.1
51
4
32
Unit: mm
+0.2
-
0.3
2.8
+0.25
-
0.05
1.50.65±0.15 0.65±0.15
15
1.45±0.1
2
0.05
+0.1
-
0.3
0.06
+0.1
-
0.16
0.1 to 0.3
0 to 0.1
0.4±0.2
Mini Type Pakage (5–pin)
Tr1
Tr2
Electrical Characteristics (Ta=25˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
*1
Ratio between 2 elements
CBO
CEO
EBO
I
CBO
I
CEO
FE
hFE (small/large)*1VCE = 10V, IC = 2mA 0.5 0.99
V
CE(sat)
T
ob
IC = 10µA, IE = 0 60 V
IC = 2mA, IB = 0 50 V
IE = 10µA, IC = 0 7 V
VCB = 20V, IE = 0 0.1 µA
VCE = 10V, IB = 0 100 µA
VCE = 10V, IC = 2mA 160 460
IC = 100mA, IB = 10mA 0.1 0.3 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
VCB = 10V, IE = 0, f = 1MHz 3.5 pF
1
Composite Transistors XN1501
PT — Ta IC — V
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
IC — V
BE
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
02.01.61.20.80.4
Base to emitter voltage VBE (V
25˚C
Ta=75˚C –25˚C
VCE=10V
CE
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
01024 86
)
Collector to emitter voltage VCE (V
IC — I
240
VCE=10V
Ta=25˚C
200
)
mA
(
160
C
120
80
Collector current I
40
0
)
0 1000800600400200
Base current IB (µA
Ta=25˚C
IB=160µA
140µA
120µA
100µA
80µA
60µA
40µA
20µA
)
B
)
1200
1000
)
µA
(
800
B
600
400
Base current I
200
0
01.00.80.60.40.2
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
IB — V
BE
VCE=10V
Ta=25˚C
Base to emitter voltage VBE (V
V
— I
CE(sat)
1 3 10 30 100
25˚C
C
IC/IB=10
Ta=75˚C
–25˚C
Collector current IC (mA
)
)
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.1 0.3
1 3 10 30 100
Collector current IC (mA
2
VCE=10V
Ta=75˚C
25˚C
–25˚C
fT — I
E
300
)
240
MHz
(
T
180
120
60
Transition frequency f
0
–0.1 –0.3
)
–1 –3 –10 –30 –100
Emitter current IE (mA
VCB=10V
Ta=25˚C
)
240
200
)
mV
(
160
120
80
Noise voltage NV
40
0
10
NV — I
VCE=10V
=80dB
G
V
Function=FLAT
Ta=25˚C
30 100 300 100050 50020 200
C
Rg=100kΩ
Collector current IC (µA
22kΩ
4.7kΩ
)
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