Panasonic UN2121, UN2122, UN2123, UN2124, UN212X Technical data

2.8

+0.2
–0.3

1.5

+0.25
–0.05

0.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

B

C

R1

R2

E

查询UN2121供应商

Transistors with built-in Resistor

UN2121/2122/2123/2124/212X/212Y

Silicon PNP epitaxial planer transistor

For digital circuits

Features

■

●

Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.

Resistance by Part Number

■

Marking Symbol (R1)(R

●

UN2121 7A 2.2kΩ 2.2kΩ

●

UN2122 7B 4.7kΩ 4.7kΩ

●

UN2123 7C 10kΩ 10kΩ

●

UN2124 7D 2.2kΩ 10kΩ

●

UN212X 7I 0.27kΩ 5kΩ

●

UN212Y 7Y 3.1kΩ 4.6kΩ

)

2

1:Base
2:Emitter EIAJ:SC-59
3:Collector Mini Type Package

Unit: mm

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T

Internal Connection

CBO

V

CEO

C

T

j

stg

–50 V
–50 V

–500 mA

200 mW
150 ˚C

–55 to +150 ˚C

1

Transistors with built-in Resistor

Electrical Characteristics (Ta=25˚C)

■

UN2121/2122/2123/2124/212X/212Y

Parameter Symbol Conditions min typ max Unit

Collector cutoff current I

UN212X I

Collector cutoff current I

UN212X I

Emitter
cutoff
current

UN2121 –5
UN2122/212X/212Y I
UN2123/2124 –1

Collector to base voltage V

Forward
current
transfer
ratio

UN2121 40
UN2122/212Y
UN2123/2124 60
UN212X 20

Collector to emitter saturation voltage V

UN212X V

UN212Y V
Output voltage high level V
Output voltage low level V
Transition frequency f

CBO

CBO

CEO

CEO

EBO

CBO

h

FE

CE(sat)IC

CE(sat)IC

CE(sat)IC

OH

OL

T

VCB = –50V, IE = 0 –1
VCB = –50V, IE = 0 – 0.1
VCE = –50V, IB = 0 –1
VCE = –50V, IB = 0 – 0.5

VEB = –6V, IC = 0 –2 mA

IC = –10µA, IE = 0 –50 V

VCE = –10V, IC = –100mA

50

= –100mA, IB = –5mA – 0.25
= –10mA, IB = – 0.3mA – 0.25 V

= –50mA, IB = –5mA – 0.15
VCC = –5V, VB = – 0.5V, RL = 500Ω –4.9 V
VCC = –5V, VB = –3.5V, RL = 500Ω – 0.2 V
VCB = –10V, IE = 50mA, f = 200MHz

200 MHz

UN2121 2.2

Input
resis­tance

UN2122 4.7
UN2123 R

1

(–30%) 10 (+30%) kΩ

UN212X 0.27
UN212Y 3.1

Resistance ratio 0.8 1.0 1.2

UN2124
UN212X 0.054

R1/R

2

0.22

UN212Y 0.67

µA

µA

Common characteristics chart

— Ta

P

T

250

)

200

mW

(

T

150

100

50

Total power dissipation P

0

02040 8060 140120100 160

Ambient temperature Ta (˚C

2

)

Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y

Characteristics charts of UN2121

— V

I

C

–240

–200

)
mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Cob — V

12

)
pF

(

10

ob

8

6

CE

IB=–1.0mA

–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA

–0.4mA
–0.3mA
–0.2mA
–0.1mA

CB

f=1MHz
I

E

Ta=25˚C

Ta=25˚C

=0

V

— I

CE(sat)

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–25˚C

–10 –30 –100 –300 –1000

Collector current IC (mA

IO — V

–10000

–3000

)

–1000

µA

(

O

–300

–100

25˚C

C

IC/IB=10

Ta=75˚C

400

FE

300

200

100

Forward current transfer ratio h

0

–1 –3

)

IN

)
V

(

IN

–100

–30

–10

–3

–1

VO=–5V
Ta=25˚C

hFE — I

C

VCE=–10V

Ta=75˚C

25˚C

–25˚C

–10 –30 –100 –300 –1000

Collector current IC (mA

VIN — I

O

VO=–0.2V
Ta=25˚C

)

4

2

Collector output capacitance C

0
–0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

Characteristics charts of UN2122

— V

I

C

–300

–250

)

mA

(

–200

C

–150

–100

Collector current I

–50

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

CE

Ta=25˚C

IB=–1.0mA

–0.9mA
–0.8mA
–0.7mA
–0.6mA

–0.5mA
–0.4mA
–0.3mA

–0.2mA
–0.1mA

–30

–10

Output current I

–3

–1

–0.4

)

)

V

(

CE(sat)

–0.03

Collector to emitter saturation voltage V

–0.01

)

Input voltage VIN (V

V

–100

–30

–10

–3

–1

–0.3

–0.1

–1 –3

CE(sat)

–25˚C

–10 –30 –100 –300 –1000

Collector current IC (mA

— I

25˚C

–1.4–1.2–1.0–0.8–0.6

)

C

IC/IB=10

Ta=75˚C

)

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

–1 –3 –10 –30 –100

Output current IO (mA

hFE — I

160

VCE=–10V

FE

120

80

40

C

Ta=75˚C

25˚C

Forward current transfer ratio h

0

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

)

–25˚C

)

3

Transistors with built-in Resistor

UN2121/2122/2123/2124/212X/212Y

)
pF

(

Cob — V

24

20

ob

16

12

8

4

CB

f=1MHz

=0

I

E

Ta=25˚C

Collector output capacitance C

0
–0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

Characteristics charts of UN2123

— V

I

C

CE

–240

–200

)

mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Ta=25˚C

IB=–1.0mA

–0.9mA
–0.8mA
–0.7mA

–0.6mA
–0.5mA
–0.4mA
–0.3mA

–0.2mA
–0.1mA

IO — V

IN

–10000

–3000

)

–1000

µA

(

O

–300

–100

–30

–10

Output current I

–3

–1

)

)

–0.4

Input voltage VIN (V

V

CE(sat)

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

Collector to emitter saturation voltage V

–0.01

–1 –3

25˚C

–25˚C

–10 –30 –100 –300 –1000

Collector current IC (mA

— I

C

VO=–5V
Ta=25˚C

)

IC/IB=10

Ta=75˚C

–1.4–1.2–1.0–0.8–0.6

)

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

200

FE

150

100

50

Forward current transfer ratio h

0

–1 –3

VIN — I

O

–1 –3 –10 –30 –100

Output current IO (mA

hFE — I

C

VCE=–10V

25˚C

–25˚C

–10 –30 –100 –300 –1000

Collector current IC (mA

VO=–0.2V
Ta=25˚C

)

Ta=75˚C

)

)
pF

(

ob

Cob — V

24

20

16

12

8

4

CB

Collector output capacitance C

0
–0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

4

f=1MHz
I

=0

E

Ta=25˚C

IO — V

IN

–10000

–3000

)

–1000

µA

(

O

–300

–100

–30

–10

Output current I

–3

–1

–0.4

)

Input voltage VIN (V

VO=–5V
Ta=25˚C

)

–1.4–1.2–1.0–0.8–0.6

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

VIN — I

O

VO=–0.2V
Ta=25˚C

–1 –3 –10 –30 –100

Output current IO (mA

)

Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y

Characteristics charts of UN2124

— V

I

C

–300

–250

)
mA

(

–200

C

–150

–100

Collector current I

–50

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Cob — V

24

)

pF

(

20

ob

16

12

CE

CB

Ta=25˚C

IB=–1.0mA

–0.9mA
–0.8mA
–0.7mA
–0.6mA

–0.5mA
–0.4mA
–0.3mA

–0.2mA
–0.1mA

f=1MHz

=0

I

E

Ta=25˚C

V

— I

CE(sat)

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

Collector to emitter saturation voltage V

–0.01

)

–25˚C

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

IO — V

–10000

–3000

)

–1000

µA

(

O

–300

–100

25˚C

C

IC/IB=10

Ta=75˚C

400

350

FE

300

250

200

150

100

Forward current transfer ratio h

50

0

–1 –3

)

IN

)
V

(

IN

–100

–30

–10

–3

–1

VO=–5V
Ta=25˚C

hFE — I

C

VCE=–10V

Ta=75˚C

25˚C

–25˚C

–10 –30 –100 –300 –1000

Collector current IC (mA

VIN — I

O

VO=–0.2V
Ta=25˚C

)

8

4

Collector output capacitance C

0
–0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

Characteristics charts of UN212X

— V

I

C

–240

–200

)
mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

CE

Ta=25˚C

IB=–1.6mA

–1.4mA
–1.2mA

–1.0mA
–0.8mA

–0.6mA
–0.4mA

–0.2mA

–30

–10

Output current I

–3

–1

–0.4

)

–100

)

V

(

CE(sat)

–0.03

Collector to emitter saturation voltage V

–0.01

)

Input voltage VIN (V

V

CE(sat)

–30

–10

–3

–1

–0.3

–0.1

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

— I

Ta=75˚C

25˚C

–1.4–1.2–1.0–0.8–0.6

)

C

IC/IB=10

–25˚C

)

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

–1 –3 –10 –30 –100

Output current IO (mA

hFE — I

240

FE

200

160

120

80

40

Forward current transfer ratio h

0

–1 –3

C

VCE=–10V

Ta=75˚C

25˚C

–25˚C

–10 –30 –100 –300 –1000

Collector current IC (mA

)

)

5

Transistors with built-in Resistor UN2121/2122/2123/2124/212X/212Y

)
pF

(

Cob — V

24

20

ob

16

12

8

4

CB

f=1MHz
I

=0

E

Ta=25˚C

Collector output capacitance C

0

–3 –10 –30 –100

–1

Collector to base voltage VCB (V

Characteristics charts of UN212Y

— V

I

C

CE

–240

–200

)

mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Ta=25˚C

IB=–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.4mA

–0.2mA

VIN — I

O

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

)

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–1 –3 –10 –30 –100

Output current IO (mA

V

CE(sat)

25˚C

–10 –30 –100 –300 –1000

Collector current IC (mA

— I

Ta=75˚C

–25˚C

VO=–0.2V
Ta=25˚C

C

IC/IB=10

)

hFE — I

C

240

FE

200

160

120

80

40

Forward current transfer ratio h

0

–1 –3

)

–10 –30 –100 –300 –1000

Collector current IC (mA

VCE=–10V

Ta=75˚C

25˚C

–25˚C

)

)
pF

(

ob

Cob — V

24

20

16

12

8

4

CB

Collector output capacitance C

0

–3 –10 –30 –100

–1

Collector to base voltage VCB (V

6

f=1MHz
I

=0

E

Ta=25˚C

VIN — I

O

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

)

–1 –3 –10 –30 –100

Output current IO (mA

VO=–0.2V
Ta=25˚C

)