Panasonic PNZ108CL Datasheet
Phototransistors
PNZ108CL
Silicon NPN Phototransistor
For optical control systems
Unit : mm
Features
High sensitivity : I
Wide directional sensitivity for easy use
= 3.5 mA (min.) (at L = 500 lx)
CE(L)
3.0±0.3
2.0±0.1
12.7 min.
Fast response : tr = 5 µs (typ.)
Signal mixing capability using base pin
Small size (low in height) package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
V
CEO
V
CBO
V
ECO
V
EBO
C
P
C
T
–25 to +85 ˚C
opr
–30 to +100 ˚C
stg
20 V
30 V
3V
5V
20 mA
100 mW
ø5.75 max.
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Collector photo current I
Peak sensitivity wavelength
CEO
CE(L)
λ
Acceptance half angle θ
Rise time t
Fall time t
Collector saturation voltage
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
50Ω R
*3
I
Classifications
CE(L)
Class Q R S
I
(mA) 3.5 to 6.0 5.0 to 9.1 > 7.5
CE(L)
V
CC
L
Sig.OUT
V
CE(sat)ICE(L)
(Input pulse)
(Output pulse)
VCE = 10V 0.05 2 µA
*3
VCE = 10V, L = 500 lx
VCE = 10V 900 nm
P
*1
Measured from the optical axis to the half power point
*2
VCC = 10V, I
r
*2
RL = 100Ω 6 µs
f
= 1mA, L = 1000 lx
t
d
t
r
= 5mA 5 µs
CE(L)
*1
td : Delay time
: Rise time (Time required for the collector photo current to
t
90%
r
increase from 10% to 90% of its final value)
10%
: Fall time (Time required for the collector photo current to
t
t
f
f
decrease from 90% to 10% of its initial value)
0.2±0.05
1.0±0.15
ø4.2±0.2
3-ø0.45±0.05
2.54±0.25
1.0±0.15
45±3˚
3
1
2
1: Emitter
2: Base
2: Collector
3.5 6 mA
80 deg.
0.3 0.6 V
Note) Difficult to guarantee compliance with moisture resistance standard (MIL-STD-202D).
1
Phototransistors PNZ108CL
P
— Ta
120
100
(mW)
C
80
60
40
20
Collector power dissipation P
0
– 20
C
0 20406080100
Ambient temperature Ta (˚C )
I
— Ta
2
10
10
CEO
VCE = 10V
(µA)
CEO
1
–1
Dark current I
10
I
— V
20
Ta = 25˚C
T = 2856K
16
(mA)
CE(L)
12
8
4
Collector photo current I
0
02016812424
CE(L)
L = 1500 lx
1000 lx
CE
750 lx
500 lx
250 lx
100 lx
2
10
(mA)
10
CE(L)
1
–1
10
Collector photo current I
–2
10
1
Collector to emitter voltage VCE (V)
Spectral sensitivity characteristics
100
V
CE
Ta = 25˚C
80
60
40
Relative sensitivity S (%)
20
10
(mA)
10
CE(L)
I
— Ta
2
1
CE(L)
VCE = 10V
L = 500 lx
T = 2856K
Collector photo current I
I
— L
CE(L)
V
= 10V
CE
Ta = 25˚C
T = 2856K
10 10
2
3
10
Illuminance L (lx)
= 10V
–2
10
– 20 0 40 8020 60 100
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚ 30˚
100
80
60
40
20
Relative sensitivity
2
40˚
50˚
60˚
70˚
S (%)
80˚
90˚
–1
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
t
— I
r
CE(L)
110
VCC = 10V
Ta = 25˚C
RL = 1kΩ
10 10
CE(L)
4
10
3
10
(µs)
r
2
10
10
Rise time t
1
–1
10
–1
–2
10
Collector photo current I
500Ω
100Ω
(mA)
2
0
400 600 800 1000 1200
200
Wavelength λ (nm)
t
4
10
3
10
(µs)
2
f
10
10
Fall time t
1
–1
10
–1
–2
10
Collector photo current I
f
— I
CE(L)
110
VCC = 10V
Ta = 25˚C
RL = 1kΩ
10 10
CE(L)
500Ω
100Ω
2
(mA)
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