Panasonic PNA1401LF, PNZ102F Datasheet
Phototransistors
PNA1401LF, PNZ102F
Silicon NPN Phototransistors
For optical control systems
PNA1401LF
ø4.6±0.15
Unit : mm
Glass window
Features
Flat window design which is suited to optical systems
Low dark current : I
= 5 nA (typ.)
CEO
Fast response : tr, tf = 3 µs (typ.)
Wide directional sensitivity
Base pin for easy circuit design (PNZ102F)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
* PNZ102F only
V
CEO
*
V
CBO
V
ECO
*
V
EBO
C
P
C
T
opr
stg
150 mW
–25 to +85 ˚C
–30 to +100 ˚C
30 V
40 V
5V
5V
50 mA
PNZ102F
4.5±0.2
12.7 min.
1.0±0.15
4.5±0.2
12.7 min.
1.0±0.2
12
ø5.75 max.
ø4.6±0.15
2-ø0.45±0.05
2.54±0.25
45±3˚
Glass window
3-ø0.45±0.05
2.54±0.25
1: Emitter
2: Collector
Unit : mm
1.0±0.15
ø5.75 max.
1.0±0.2
45±3˚
3
1
2
1: Emitter
2: Base
3: Collector
1
PNA1401LF, PNZ102F Phototransistors
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Collector photo current I
Peak sensitivity wave length
CEO
CE(L)
λ
Acceptance half angle θ
Response time tr, t
Collector saturation voltage
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
V
CE(sat)
VCE = 10V 5 300 nA
VCE = 10V, L = 100 lx
VCE = 10V 800 nm
P
Measured from the optical axis to the half power point
*2
VCC = 10V, I
f
L = 500 lx
CE(L)
PNA1401LF I
*1
PNZ102F I
*1
0.1 0.3 mA
40 deg.
= 5mA, RL = 100Ω 3 µs
= 0.1mA
CE(L)
CE(L)
= 0.1mA
.2 0.4 V
0
Sig.IN
50Ω R
200
160
(mW)
C
120
80
40
Collector power dissipation P
0
0 20406080100
– 20
Ambient temperature Ta (˚C )
P
— Ta
C
V
CC
L
Sig.OUT
(Input pulse)
(Output pulse)
2.0
1.6
(mA)
CE(L)
1.2
0.8
0.4
Collector photo current I
td : Delay time
: Rise time (Time required for the collector photo current to
t
90%
r
increase from 10% to 90% of its final value)
I
CE(L)
800 lx
t
f
10%
: Fall time (Time required for the collector photo current to
t
f
decrease from 90% to 10% of its initial value)
— V
CE
700 lx
600 lx
500 lx
400 lx
300 lx
200 lx
100 lx
L = 50 lx
t
d
t
r
900 lx
1000 lx
0
0 8 16 24 32
Collector to emitter voltage VCE (V)
I
10
(mA)
1
CE(L)
–1
10
–2
10
Collector photo current I
–3
10
1
CE(L)
10 10
Illuminance L (lx)
— L
V
= 10V
CE
Ta = 25˚C
T = 2856K
2
3
10
2
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