Panasonic OH10008 Datasheet

GaAs Hall Devices

0.6 ± 0.05

2.85 ± 0.25

φ 1.0 ± 0.025

0.5 ± 0.1

32

41

1.45 ± 0.05

0.9 ± 0.05

1.45 ± 0.05

0.3 max.

0.8 ± 0.1

0.6 ± 0.1

0.26 ± 0.05

0 to 0.15

5

5

0.2 max.

OH10008

GaAs Hall Device

Magnetic sensor

■ Features

•

Hall voltage: typ. 105 mV (V

•

Input resistance: typ. 750 kΩ

•

Satisfactory linearity of GaAs hall voltage with respect to the
magnetic field

•

Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C

•

Mini type (4-pin) package with positioning projection. Allowing
automatic insertion through the magazine package.

■ Applications

•

Thin and small hall motors (Applicable to CD, VD, VCR, FDD, and
other portable equipment)

•

Automotive equipment

•

Measurement equipment

•

Applicable to wide-varying field (OA equipment, etc.)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Control voltage V

Power dissipation P

Operating ambient temperature

Storage temperature T

= 6 V, B = 0.1 T)

C

C

D

T

opr

stg

100 mW

−30 to +125 °C

−55 to +125 °C

12 V

Unit : mm

1 : VC Input (+) side
2 : V

Output (−) side

H

3 : V

Input (−) side

C

4 : V

Output (+) side

Mini Type Package (4-pin) with positioning projection

H

Marking Symbol: B

■ Electrical Characteristics Ta = 25°C

Hall voltage

Unequilibrium ratio

Input resistance R

Output resistance R

Temperature coefficient of hall voltage
Temperature coefficient of input α IC = 1 mA, B = 0 T 0.3 %/°C

resistance

Linearity of hall voltage

Note) *1: VH =

*2: Output pin voltage under no-load (B = 0) condition

*3: The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured

*4:VHO rank classification

Class A B C D E

VHO (mV) +19 to +9 +12 to +2 +5 to −5 −2 to −12 −9 to −19

Parameter Symbol Conditions Min Typ Max Unit

1

*

2, 4

*

V

H

V

HO

IN

OUT

VC = 6 V, B = 0.1 T 80 105 130 mV

VC = 6 V, B = 0 T ±19 mV

IC = 1 mA, B = 0 T 0.5 0.75 kΩ

IC = 1 mA, B = 0 T 1.5 5 kΩ

β IC = 6 mA, B = 0.1 T −0.06 %/°C

3

V

+

H

*

+V

−



H

γ IC = 6 mA, B = 0.1 T/0.5 T 2 %

2

respectively at B = 0.1 T and 0.5 T to their average. That is,

KH5−K

H1

γ =

1/2(KH1+KH5)I

(the cumulative sensitivity KH =

C

V

・B

H

)

1

OH10008

GaAs Hall Devices

PD  T

200

180

)

160

mW

140

(

D

120

100

80

60

Power dissipation P

40

20

0

02040 8060 140120100 160

a

Ambient temperature Ta (°C

VH  B

1 600

1 400

1 200

)

mV
(

1 000

H

800

600

Hall voltage V

400

200

0

0 0.2 0.4 0.6 0.8 1.0

Magnetic flux density B (T

VC = 6 V

= 25°C

T

a

240

200

)

mV

160

(

H

120

80

Hall voltage V

40

0

)

−40 0 40 80 120

Ambient temperature Ta (°C

V

320

280

240

)

mV
(

200

H

160

120

Hall voltage V

80

40

0

0 4 12 162 6 10 148

VH  T

)

Control current IC (mA

H

 I

a

C

B = 1 kG

= 6 mA

I

C

B = 1 kG

= 25°C

T

a

1 600

1 400

)

1 200

Ω

(

IN

1 000

800

600

400

Input resistance R

200

0

)

320

280

240

)

mV
(

200

H

160

120

Hall voltage V

80

40

0

0 4 12 162 6 10 148

)

RIN  T

−40 0 40 80 120

a

B = 0

= 1 mA

I

C

Ambient temperature Ta (°C

VH  V

Control voltage VC (V

C

B = 1 kG

= 25°C

T

a

)

)

■ Typical Drive Circuit

2

+9 V

1

42

3

−9 V

−V

+9 V

−
+

−9 V

+V