Page 1
This product complies with the RoHS Directive (EU 2002/95/EC).
1
(G)2(S)3(A)
(K)
4
(D)
5
(D)
6
Multi Chip Discrete
MTM86628
Silicon P-channel MOS FET (FET)
Silicon epitaxial planar type (SBD)
For DC-DC converter
For switching circuits
Overview
MTM86628 is the composite MOS FET (P-channel MOS FET and Schottky
Barrier Diode) that is highly suitable for DC-DC converter and other switching
circuits.
Features
Built-in schottky barrier diode: VR = 15 V, IF = 700 mA
Low on-resistance: Ron = 300 mW (VGS = –4.0 V)
Low short-circuit input capacitance (Common source): C
Small surface mounting halogen-free package: WSSMini6-F1 (1.6 mm × 1.6
mm × 0.5 mm)
= 80 pF
iss
Package
Code
WSSMini6-F1
Pin Name
1: Gate 4: Cathode
2: Source 5: Drain
3: Anode 6: Drain
Marking Symbol: PL
Internal Connection
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Drain-source surrender voltage V
Gate-source surrender voltage V
Drain current I
1
*
FET
Peak drain current
Channel temperature
Storage temperature T
Total power dissipation
Reverse voltage V
Forward current (Average) I
SBD
Junction temperature T
Storage temperature T
Note) *1: t = 10 µs, Duty Cycle < 1%
2: Glass epoxy board: 25.4 mm × 25.4 mm × 0.8 mm
*
Copper foil of the drain portion should have a area of 300 mm2 or more
3: Stand-alone (without the board)
*
P
P
F(AV)
I
T
D1
D2
DSS
GSS
D
DP
ch
stg
stg
2
*
3
*
R
j
–20 V
±12
–1.0 A
–4.0 A
150
–55 to +150
540 mW
150 mW
15 V
700 mA
125
–55 to +125
V
°C
°C
°C
°C
Publication date: November 2008 SJF00111AED 1
Page 2
This product complies with the RoHS Directive (EU 2002/95/EC).
VDD = −15 V
PW = 10 µs
Duty Cycle ≤ 1%
ID = − 0.5 A
RL = 30 Ω
V
OUT
V
IN
D
G
S
V
IN
50 Ω
t
d(on)
t
d(off)
0 V
−4 V
V
IN
V
OUT
10%
90%
90%
10%
t
r
t
f
MTM86628
Electrical Characteristics Ta = 25°C±3°C
FET
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage V
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage V
Drain-source ON resistance R
Forward transfer admittance
Short-circuit input capacitance (Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Turn-on delay time
Rise time
*
Turn-off delay time
Fall time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: ton , t
*
*
*
measurement circuit
off
DSSID
I
DSS
I
GSS
THID
DS(on)
Yfs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
= –1.0 mA, VGS = 0 –20 V
VDS = –20 V, VGS = 0 –1.0
VGS = ±10 V, VDS = 0
= –1.0 mA, VDS = –10 V – 0.45 –1.0 –1.5 V
ID = – 0.5 A, VGS = –4.0 V 300 420
ID = – 0.5 A, VGS = –2.5 V 420 560
ID = – 0.5 A, VDS = –10 V 1.0 2.0 S
80 pF
VDS = –10 V, VGS = 0, f = 1 MHz
12 pF
12 pF
12 ns
VDD = –15 V, VGS = –4.0 V, ID = – 0.5 A
6 ns
17 ns
10 ns
µA
±10 µA
mW
SBD
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2 SJF00111AED
IF = 500 mA 0.42 V
F
IF = 700 mA 0.45 V
VR = 6 V 90
R
VR = 15 V 250
µA
µA
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC).
0
40
80
160120
0
400
200
600
MTM86628_ PD-T
a
Total power dissipation P
D
(mW)
Ambient temperature Ta (°C)
0 − 0.2 − 0.4 −1.0− 0.6 − 0.8
0
− 0.02
− 0.04
− 0.06
− 0.08
− 0.10
MTM86628_ ID-V
DS
Drain current I
D
(A)
Drain-source voltage VDS (V)
−1.4 V
−1.2 V
VGS = −1.6 V
0
−2 −10−8−6−4
0.1
0.2
0.3
0.4
0.5
MTM86628_ R
DS(on)-VGS
Drain-source ON resistance R
DS(on)
(Ω)
Gate-source voltage VGS (V)
ID = − 0.5 A
− 0.1 −1.0
0
0.1
0.2
0.3
0.4
0.5
MTM86628_ R
DS(on)-ID
Drain-source ON resistance R
DS(on)
(Ω)
Drain current ID (A)
VGS = 2.5 V
4.0 V
−50 −15 −20−10
0
20
40
60
120
100
80
MTM86628_ CX-V
DS
Drain-source voltage VDS (V)
Short-circuit input capacitance (Common source)
C
iss
,
Short-circuit output capacitance (Common source)
C
oss
,
Reverse transfer capacitance (Common source) C
rss
(pF)
C
iss
C
oss
C
rss
0 0.2 0.60.4
10
3
1
10
10
2
MTM86628_IF-V
F
Forward current I
F
(m
A
)
Forward voltage VF (V
)
Ta = 75°C
−25°C
25°C
0 9 1263 15
10
−1
1
10
10
3
10
2
10
4
MTM86628_IR-V
R
Reverse current I
R
(µ
A
)
Reverse voltage VR
(V)
Ta = 75°C
−25°C
25°C
0 2010 155
0
40
20
60
80
100
MTM86628_Ct-V
R
Terminal capacitance C
t
(pF)
Reverse voltage VR (V
)
MTM86628
Characteristics charts of FET
PD Ta ID VDS R
DS(on)
V
GS
R
ID CX V
DS(on)
DS
Characteristics charts of SBD
IF VF IR VR Ct V
R
SJF00111AED 4
Page 4
This product complies with the RoHS Directive (EU 2002/95/EC).
WSSMini6-F1 Unit: mm
+0.05
−0.02
1.60 ±0.05
1.00 ±0.05
(0.50) (0.50)
1.60 ±0.05
(0.10)
1.40 ±0.05
0.50 ±0.05
0.20
+0.05
−0.03
0.13
6 5 4
1 2 3
0 to 0.02
5°
5°
(0.15)
MTM86628
4 SJF00111AED
Page 5
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20080805
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