Panasonic MA4X174, MA174 User Manual

Switching Diodes

This product complies with the RoHS Directive (EU 2002/95/EC).

MA4X174 (MA174)

Silicon planar type

For small power rectification and surge absorption

■ Features

• Two isolated elements contained in one package, allowing high­density mounting

• High breakdown voltage: V

= 200 V

R

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage V

Non-repetitive peak reverse V
surge voltage

Output current Single I

Double 75

Repetitive peak

forward current

Non-repetitive peak

forward surge current

Single I

Double 170

Single I

*

Double 375

Junction temperature T

Storage temperature T

Note)*: t = 1 s

R

RRM

RSM

O

FRM

FSM

j

stg

200 V

250 V

300 V

100 mA

225 mA

500 mA

125 °C

−55 to +125 °C

+0.2

+0.3

–0.3

2.8

–0.1

1.1

Unit: mm

+0.10

0.16

–0.06

5˚

1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1

+0.20

2.90

–0.05

1.9

±0.2

(0.95)(0.95)

34

+0.25

–0.05

0.5R

1.50

21

(0.2)

+0.10

0.60

–0.05

10˚

EIAJ: SC-61 Mini4-G1 Package

0.40

(0.65)

+0.10
–0.05

+0.2

–0.1

1.1

0 to 0.1

Marking Symbol: M2O

Internal Connection

3

4

1

2

±0.2

0.4

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 3 MHz.

Publication date: March 2004 SKF00046BED

F

R

IF = 100 mA 1.3 V

VR = 200 V 1.0 µA

Note) The part number in the parenthesis shows conventional part number.

1

MA4X174

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

3

10

2

10

)

mA
(

F

10

= 125°C

T

a

1

75°C

Forward current I

25°C

−1

10

−20°C

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

IR  T

V

= 200 V

R

a



2

10

10

)
µA

(

R

1

−1

10

Reverse current I

−2

10

100 V
10 V

IR  V

Ct  V

T

a

R

= 125°C

R

f = 1 MHz
T

= 25°C

a

)

75°C

25°C

1.6

)

1.2

V
(

F

0.8

Forward voltage V

0.4

0

−40 0 40 80 120 160 200

3

10

)
A

(

2

10

F(surge)

10

1

Forward surge current I

2

10

10

)
µA

(

R

1

−1

10

Reverse current I

−2

10

−3

10

)

0 40 80 120 160 200 240

Reverse voltage VR (V

2.4

2.0

)
pF

(

t

1.6

1.2

0.8

Terminal capacitance C

0.4

VF  T

a

= 100 mA

I

F

10 mA

3 mA

Ambient temperature Ta (°C

I

 t

F(surge)

W

= 25°C

T

a

I

t

W

Non repetitive

)

F(surge)

−3

10

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

2

0

)

0 40 80 120 160 200 240

Reverse voltage VR (V

)

−1

10

−1

Pulse width tW (ms

10110

)

SKF00046BED