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Semiconductor Laser
LNCQ03PS
Red Light Semiconductor Laser
For optical control systems
1.0±0.1
+0
ø5.6
–0.025
ø4.4
ø3.55±0.1
Unit : mm
2
Reference slot
Features
High output operations with oscillatins wavelength of 660nm : 35mw
Low threshold current
Stable single horizontal mode osillation
Space saved by miniaturization
Low astigmatic difference facilitates good concentrated light spot,
production.
Applications
DVD-Ram
Pointer
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Radiant power P
Reverse voltage
Laser V
PIN VR (PIN) 30 V
O
R
Power dissipation Pd (PIN) 60 mW
Operating ambient temperature
Storage temperature T
T
opr
stg
35 mW
1.5 V
–10 to +60 ˚C
– 40 to +85 ˚C
0.4±0.1
2.3
1.2
6.5
110˚±1˚
ø1.0 min.
0.25
1.27±0.07
ø2.0
13
2
Bottom view
Junction plane
Reference plane
Reference plane
3-ø0.45
LDPD
13
1: LD Anode
2: Common Case
3: PD Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Threshold current I
Operating current I
OP
Operating voltage V
Resistance between electrodes
R
Oscillation wavelength λ
Slope efficiency SE CW PO = 30mW 0.5 0.7 1.1 W/A
Radiation angle
Optical axis
accuracy
Horizontal direction
Vertical direction
X direction
Y direction
θ
θ
θ
θ
Astigmatic difference As
*1
θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle )
*2
Reference to package axis.
*3
Guaranteed value in design.
CW 20 50 70 mA
th
CW PO = 30mW 50 95 120 mA
CW PO = 30mW 2.0 2.5 3.0 V
OP
CW PO = 30mW 3.0 5.0 10 Ω
S
CW PO = 30mW 635 660 675 nm
L
CW PO = 30mW 7.5 8.5 10.5 deg.
//
CW PO = 30mW 17 22 26.5 deg.
⊥
CW PO = 30mW –2.0 +2.0 deg.
X
CW PO = 4mW –3.0 +3.0 deg.
Y
*2
CW PO = 4mW 5.0 10 µm
1
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Semiconductor Laser LNCQ03PS
P
80
60
(mW)
O
40
Radiant power P
20
0
0 20050 100 150
O
Operating current IOP (mA)
I
10
(mA)
th
10
2
th
— I
— Ta
OP
I — V
160
Ta = 25˚C
120
80
Current I (mA)
40
0
0123 4
3
10
(mA)
OP
2
10
Voltage V (V)
I
— Ta
OP
Far field pattern
100
O
75
50
25
Relative radiant power ∆P
0
60 40 20 0 20 6040
0.4
0.3
(µA)
P
0.2
Angle θ (deg.)
I
— Ta
P
Fv
Fh
Threshold current I
1
020 6040 80
Ambient temperature Ta (˚C )
P
— Ta
50
40
(mW)
O
30
20
Radiant power P
10
0
– 10 10 30 50 70
O
Ambient temperature Ta (˚C )
Operating current I
10
020 6040 80
Ambient temperature Ta (˚C )
I
— Ta
2
10
10
(nA)
d
1
–1
10
PIN dark current I
–2
10
–3
10
– 10
d
VR (PIN) = 30V
10 30 7050
Ambient temperature Ta (˚C )
0.1
PIN photo current I
0
–20 0 20 40 60
Ambient temperature Ta (˚C )
2