Panasonic LNCQ03PS Datasheet

Semiconductor Laser

LNCQ03PS

Red Light Semiconductor Laser

For optical control systems

1.0±0.1

+0

ø5.6

–0.025

ø4.4

ø3.55±0.1

Unit : mm

2

Reference slot

Features

High output operations with oscillatins wavelength of 660nm : 35mw
Low threshold current
Stable single horizontal mode osillation
Space saved by miniaturization
Low astigmatic difference facilitates good concentrated light spot,

production.

Applications

DVD-Ram
Pointer

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Radiant power P

Reverse voltage

Laser V

PIN VR (PIN) 30 V

O

R

Power dissipation Pd (PIN) 60 mW
Operating ambient temperature
Storage temperature T

T

opr

stg

35 mW

1.5 V

–10 to +60 ˚C

– 40 to +85 ˚C

0.4±0.1

2.3

1.2

6.5

110˚±1˚

ø1.0 min.

0.25

1.27±0.07

ø2.0

13

2

Bottom view

Junction plane
Reference plane

Reference plane

3-ø0.45

LDPD

13

1: LD Anode
2: Common Case
3: PD Cathode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Threshold current I
Operating current I

OP

Operating voltage V

Resistance between electrodes

R

Oscillation wavelength λ
Slope efficiency SE CW PO = 30mW 0.5 0.7 1.1 W/A

Radiation angle

Optical axis
accuracy

Horizontal direction

Vertical direction

X direction
Y direction

θ
θ
θ
θ

Astigmatic difference As

*1

θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle )

*2

Reference to package axis.

*3

Guaranteed value in design.

CW 20 50 70 mA

th

CW PO = 30mW 50 95 120 mA
CW PO = 30mW 2.0 2.5 3.0 V

OP

CW PO = 30mW 3.0 5.0 10 Ω

S

CW PO = 30mW 635 660 675 nm

L

CW PO = 30mW 7.5 8.5 10.5 deg.

//

CW PO = 30mW 17 22 26.5 deg.

⊥

CW PO = 30mW –2.0 +2.0 deg.

X

CW PO = 4mW –3.0 +3.0 deg.

Y

*2

CW PO = 4mW 5.0 10 µm

1

Semiconductor Laser LNCQ03PS

P

80

60

(mW)

O

40

Radiant power P

20

0

0 20050 100 150

O

Operating current IOP (mA)

I

10

(mA)

th

10

2

th

— I

— Ta

OP

I — V

160

Ta = 25˚C

120

80

Current I (mA)

40

0

0123 4

3

10

(mA)

OP

2

10

Voltage V (V)

I

— Ta

OP

Far field pattern

100

O

75

50

25

Relative radiant power ∆P

0

60 40 20 0 20 6040

0.4

0.3

(µA)

P

0.2

Angle θ (deg.)

I

— Ta

P

Fv

Fh

Threshold current I

1

020 6040 80

Ambient temperature Ta (˚C )

P

— Ta

50

40

(mW)

O

30

20

Radiant power P

10

0
– 10 10 30 50 70

O

Ambient temperature Ta (˚C )

Operating current I

10

020 6040 80

Ambient temperature Ta (˚C )

I

— Ta

2

10

10

(nA)

d

1

–1

10

PIN dark current I

–2

10

–3

10

– 10

d

VR (PIN) = 30V

10 30 7050

Ambient temperature Ta (˚C )

0.1

PIN photo current I

0

–20 0 20 40 60

Ambient temperature Ta (˚C )

2