Panasonic LNC803PS Datasheet

Semiconductor Laser

LNC803PS

High Power Output Semiconductor Laser

Overview

The LNC803PS is a GaAlAs laser diode which provides stable,
continuous, single mode oscillation of near infrared light at room
temperature. This product can be used in a wide range of light source
applications, including laser printers, facsimiles, optical disk memory,
and optical information devices.

Features

Low threshold oscillation
Stable single horizontal mode oscillation
Built-in PIN photodiode for light output monitors
Light output is continuously variable as far as 60 mW
Supports direct modulation
Near infrared oscillating wavelength
Long lifetime, high reliability

ø1.0 min.

110˚±1˚

0.4±0.1

2.3±0.2

1.27

1.2±0.1

0.5

6.5±0.5

ø2.0

ø5.6
ø4.3±0.1

ø3.55±0.1

1.0±0.1

0.25

max.

13

Bottom view

+0
–0.025

2

Junction plane
Reference plane

Reference slot
Kovar glass
LD pellet

Reference plane

ø1.2max.
3-ø0.45

Unit : mm

2

PDLD

13

1: LD Anode
2: Common Case
3: PD Cathode

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Radiant power P

Reverse voltage

Laser V

PIN VR (PIN) 30 V

O

R

40 mW

1.5 V

Power dissipation Pd (PIN) 100 mW
Operating ambient temperature
Storage temperature T

T

–10 to +60 ˚C

opr

– 40 to +80 ˚C

stg

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Threshold current I
Operating current I

OP

Operating voltage V
Oscillation wavelength λ

Radiation angle

Horizontal direction

Vertical direction

θ
θ

Differential efficiency η
Reverse current (DC) I
PIN photo current I

Optical axis
accuracy

X direction
Y direction

θ
θ

Oscillation mode Single horizontal mode

*

θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle )

CW 10 25 40 mA

th

PO = 32mW 30 50 90 mA
PO = 32mW 2.0 3.0 V

OP

PO = 32mW 815 830 845 nm

L

*

PO =32mW 7 10 13 deg.

//

*

PO = 32mW 18 25 28 deg.

⊥

CW PO = 28mW/I(30mW – 4mW)
VR (PIN) = 5V 0.1 µA

R

PO = 32mW, VR (PIN) = 5V mA

P

PO = 32mW –2.0 +2.0 deg.

X

PO = 32mW –3.0 +3.0 deg.

Y

0.6 1.0 1.5 mW/mA

1

Semiconductor Laser LNC803PS

P

60

50

40

(mW)

O

30

20

Radiant power P

10

0

0 12040 80

Operating current IOP (mA)

2

10

(mA)

th

10

O

I

th

— I

— Ta

OP

I — V

200

Ta = 25˚C

100

0

Current I (mA)

–100

–200

–4 –2 0 2 4

3

10

(mA)

OP

2

10

Voltage V (V)

I

— Ta

OP

PO = 32mW

Far field pattern

100

80

O

60

40

Relative radiant power ∆P

20

0

40 20 0 20 40

Angle θ (deg.)

60

50

40

(mW)

O

30

P

— Ta

O

θ

//

θ

⊥

Threshold current I

1
– 10 10 5030 70

Ambient temperature Ta (˚C )

I

— Ta

2

10

10

(nA)

d

1

–1

10

PIN dark current I

–2

10

–3

10

– 10

d

VR (PIN) = 30V

10 30 7050

Ambient temperature Ta (˚C )

20

Operating current I

10

– 10 10 5030 70

Radiant power P

10

0

– 10 10 30 50 70

Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C )

2