Panasonic LNC802PS Datasheet

Semiconductor Laser

LNC802PS

GaAlAs Semiconductor Laser

Features

Low threshold current
Stable single horizontal mode oscillation
Long lifetime, high reliability
High radiant power : 50mW

Applications

Optical data processing devices
Optical disk memory
Medical equipment

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Radiant power P

Reverse voltage

Laser V

PIN VR (PIN) 30 V

O

R

Power dissipation Pd (PIN) 100 mW
Operating ambient temperature
Storage temperature T

T

opr
stg

50 mW

1.5 V

–10 to +60 ˚C

– 40 to +80 ˚C

ø1.0 min.

0.4±0.1

2.3±0.2

1.27

1.2±0.1

6.5±0.5

110˚±1˚

1.0±0.1

0.25

0.5 max.

ø2.0

Bottom view

+0

ø5.6

–0.025

ø4.3±0.1

ø3.55±0.1

Y

Kovar glass

Z

ø1.2 max.
3-ø0.45

2

13

X

Junction plane

Reference slot

LD pellet
Reference plane

1: LD Anode
2: Common Case
3: PD Cathode

Unit : mm

2

PDLD

13

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Threshold current I
Operating current I

OP

Operating voltage V
Oscillation wavelength λ

Radiation angle

Horizontal direction

Vertical direction

θ

//

θ

⊥

Differential efficiency η
PIN photo current I
Reverse current (DC) I

Optical axis
accuracy

*1

The radiation angle is indicated as half full angles.

X direction
Y direction

θ
θ

CW 10 30 50 mA

th

CW PO = 40mW 45 65 100 mA
CW PO = 40mW 2.0 3.0 V

OP

CW PO = 40mW 815 830 845 nm

L

*1

CW PO = 40mW 7 10 13 deg.

*1

CW PO = 40mW 18 25 30 deg.
CW PO = 36mW/I(40mW – 4mW)
CW PO = 40mW,

P

VR (PIN) = 15V 0.1 µA

R

CW PO = 40mW –2.0 +2.0 deg.

X

CW PO = 40mW –3.0 +3.0 deg.

Y

VR (PIN) = 5V

0.6 1.0 1.5
mA

1

Semiconductor Laser LNC802PS

P

60

50

40

(mW)

O

30

20

Radiant power P

10

0

0 12040 80

Operating current IOP (mA)

2

10

(mA)

th

10

O

I

th

— I

— Ta

OP

I — V

200

Ta = 25˚C

100

0

Current I (mA)

–100

–200

–4 –2 0 2 4

3

10

(mA)

OP

2

10

Voltage V (V)

I

— Ta

OP

PO = 40mW

Far field pattern

100

80

O

60

40

Relative radiant power ∆P

20

0

40 20 0 20 40

Angle θ (deg.)

60

50

40

(mW)

O

30

P

— Ta

O

θ//θ

⊥

Threshold current I

1
– 10 10 5030 70

Ambient temperature Ta (˚C )

I

— Ta

2

10

10

(nA)

d

1

–1

10

PIN dark current I

–2

10

–3

10

– 10

d

VR (PIN) = 15V

10 30 7050

Ambient temperature Ta (˚C )

20

Operating current I

10

– 10 10 5030 70

Radiant power P

10

0

– 10 10 30 50 70

Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C )

2