Panasonic LNC801PS Datasheet

Semiconductor Laser
LNC801PS
High Power Output Semiconductor Laser
Overview
The LNC801PS is a GaAlAs laser diode which provides stable, continuous, single mode oscillation of near infrared light at room temperature. This product can be used in a wide range of light source applications, including laser printers, facsimiles, optical disk memory, and optical information devices.
Features
Low threshold oscillation Stable single horizontal mode oscillation Built-in PIN photodiode for light output monitors Light output is continuously variable as far as 60 mW Supports direct modulation Near infrared oscillating wavelength Long lifetime, high reliability
ø1.0 min.
110˚±
0.4±0.1
2.3±0.2
1.27
1.2±0.1
0.5
6.5±0.5
ø2.0
ø5.6 ø4.3±0.1
ø3.55±0.1
1.0±0.1
0.25
max.
13
Bottom view
+0 –0.025
2
Junction plane Reference plane
Reference slot Kovar glass LD pellet
Reference plane
ø1.2max. 3-ø0.45
Unit : mm
2
PDLD
13
1: LD Anode 2: Common Case 3: PD Cathode
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Radiant power P
Reverse voltage
Laser V
PIN VR (PIN) 30 V
O
R
60 mW
1.5 V
Power dissipation Pd (PIN) 100 mW Operating ambient temperature Storage temperature T
T
–10 to +60 ˚C
opr
– 40 to +80 ˚C
stg
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Threshold current I Operating current I
OP
Operating voltage V Oscillation wavelength λ
Radiation angle
Horizontal direction
Vertical direction
θ θ
Differential efficiency η Reverse current (DC) I PIN photo current I
Optical axis accuracy
X direction Y direction
θ θ
Oscillation mode Single horizontal mode
*
θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle )
CW 10 30 50 mA
th
PO = 50mW 50 70 120 mA PO = 50mW 2.0 3.0 V
OP
PO = 50mW 815 830 845 nm
L
*
PO = 50mW 7 10 13 deg.
//
*
PO = 50mW 18 25 28 deg.
CW PO = 36mW/I(40mW – 4mW) VR (PIN) = 5V 0.1 µA
R
PO = 50mW, VR (PIN) = 5V mA
P
PO = 50mW –2.0 +2.0 deg.
X
PO = 50mW –3.0 +3.0 deg.
Y
0.6 1.0 1.5 mW/mA
1
Semiconductor Laser LNC801PS
P
60
50
40
(mW)
O
30
20
Radiant power P
10
0
0 12040 80
Operating current IOP (mA)
2
10
(mA)
th
10
O
I
th
— I
— Ta
OP
I — V
200
Ta = 25˚C
100
0
Current I (mA)
–100
–200
–4 –2 0 2 4
3
10
(mA)
OP
2
10
Voltage V (V)
I
— Ta
OP
PO = 50mW
Far field pattern
100
80
O
— Ta
θ
θ
//
60
40
Relative radiant power P
20
0
40 20 0 20 40
Angle θ (deg.)
P
100
80
(mW)
O
60
40
O
Threshold current I
1 – 10 10 5030 70
Ambient temperature Ta (˚C )
I
— Ta
2
10
10
(nA)
d
1
–1
10
PIN dark current I
–2
10
–3
10
– 10
d
VR (PIN) = 30V
10 30 7050
Ambient temperature Ta (˚C )
Operating current I
10
– 10 10 5030 70
Radiant power P
20
0 – 10 10 30 50 70
Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C )
2
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