Panasonic LNC707PS Datasheet

Semiconductor Laser

LNC707PS

High Power Output Semiconductor Laser

Overview

The LNC707PS is a near infrared GaAlAs laser diode which
provides continuous oscillation in single mode and is stable at low
operating current. LNC707PS uses a small package, and is capable
of operating continuously at high temperatures with high output (60
mW). It can be used in a wide range of applications as a light source
for optical disk memory and optical information devices. In
particular, it can be used in making equipment portable due to its
low current operations.

ø1.0 min.

110˚±1˚

0.4±0.1

2.3±0.2

1.27

1.0±0.1

0.25

+0

ø5.6

–0.025

ø4.3±0.1

ø3.55±0.1

Junction plane
Reference plane

Reference slot
Kovar glass
LD pellet

Reference plane

Unit : mm

2

PDLD

13

Features

Low current operations : 70 mA (with 60 mW output)
High power output : 60 mW
Stable single horizontal mode oscillation
Small size package

1.2±0.1

0.5

max.

6.5±0.5

ø2.0

Bottom view

ø1.2max.
3-ø0.45

2

13

1: LD Anode
2: Common Case
3: PD Cathode

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Radiant power P

Reverse voltage

Laser V

PIN VR (PIN) 30 V

O

R

60 mW

2V

Power dissipation Pd (PIN) 100 mW
Operating ambient temperature
Storage temperature T

T

–10 to +60 ˚C

opr

– 40 to +80 ˚C

stg

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Threshold current I
Operating current I

OP

Operating voltage V
Oscillation wavelength λ

Radiation angle

Horizontal direction

Vertical direction

θ
θ

Differential efficiency η PO = 55mW/I(60mW – 5mW) 0.7 0.9 1.2 mW/mA
Reverse current (DC) I
PIN photo current I

Optical axis
accuracy

X direction
Y direction

θ
θ

Oscillation mode Single horizontal mode

*

θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle )

CW 15 25 35 mA

th

PO = 60mW 70 100 130 mA
PO = 60mW 2.0 2.5 V

OP

PO = 60mW 778 784 790 nm

L

*

PO = 60mW 7 10 13 deg.

//

*

PO = 60mW 17 21 25 deg.

⊥

VR (PIN) = 5V 0.1 µA

R

PO = 60mW, VR (PIN) = 5V 0.2 mA

P

PO = 60mW –2.0 +2.0 deg.

X

PO = 50mW –3.0 +3.0 deg.

Y

1

Semiconductor Laser LNC707PS

P

60

50

40

(mW)

O

30

20

Radiant power P

10

0

0 12040 80

Operating current IOP (mA)

2

10

(mA)

th

10

O

I

th

— I

— Ta

OP

I — V

200

Ta = 25˚C

100

0

Current I (mA)

–100

–200

–4 –2 0 2 4

3

10

(mA)

OP

2

10

Voltage V (V)

I

— Ta

OP

= 60mW

P

O

Far field pattern

100

80

O

60

40

Relative radiant power ∆P

20

0

40 20 0 20 40

Angle θ (deg.)

400

300

(µA)

P

200

I

P

— Ta

θ//θ

V
PO = 60mW

R

⊥

(PIN) = 5V

Threshold current I

1
– 10 10 5030 70

Ambient temperature Ta (˚C )

P

— Ta

100

80

(mW)

O

60

40

Radiant power P

20

0
– 10 10 30 50 70

O

Ambient temperature Ta (˚C )

Operating current I

10

– 10 10 5030 70

Ambient temperature Ta (˚C )

I

— Ta

2

10

10

(nA)

d

1

–1

10

PIN dark current I

–2

10

–3

10

– 10

d

VR (PIN) = 30V

10 30 7050

Ambient temperature Ta (˚C )

100

PIN photo current I

0

–10 10 30 50 70

Ambient temperature Ta (˚C )

2