Panasonic LNC703PS Datasheet

Semiconductor Laser

LNC703PS

Semiconductor Laser for LBP(Laser Beam Printers)

Overview

The LNC703PS is a near infrared GaAlAs laser diode which
provides continuous oscillation in single mode and is stable at low
operating current. This product is characterized by a low operating
current and low drooping, making it suitable for a wide range of
optical information equipment.

Features

Low current operations : 40 mA (with 12 mW output)

High output (15 mW) for increased printing speed

Stable single horizontal mode oscillation

Low astigmatic difference

Low drooping

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Radiant power P

Reverse voltage

Laser V

PIN VR (PIN) 30 V

O

R

Power dissipation Pd (PIN) 100 mW
Operating ambient temperature
Storage temperature T

T

opr

stg

15 mW

2V

–10 to +60 ˚C

– 40 to +80 ˚C

ø1.0 min.

110˚±1˚

0.4±0.1

2.3±0.2

1.27

1.2±0.1

0.5

6.5±0.5

ø2.0

ø5.6
ø4.3±0.1

ø3.55±0.1

1.0±0.1

0.25

max.

13

Bottom view

+0
–0.025

2

Junction plane
Reference plane

Reference slot
Kovar glass
LD pellet

Reference plane

ø1.2max.
3-ø0.45

Unit : mm

2

PDLD

13

1: LD Anode
2: Common Case
3: PD Cathode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Threshold current I
Operating current I

OP

Operating voltage V
Oscillation wavelength λ

Radiation angle

Horizontal direction

Vertical direction

θ
θ

Differential efficiency η PO = 9mW/I(12mW) – I(3mW) 0.4 0.7 1.0 mW/mA
Reverse current (DC) I
PIN photo current I

Optical axis
accuracy

X direction
Y direction

θ
θ

Droop D
Oscillation mode Single horizontal mode

*

θ// and θ⊥are the angles where the optical intencity is a half of its max. value. ( half full angle )

CW 10 20 35 mA

th

PO = 12mW 30 40 70 mA
PO = 12mW 2.0 2.5 V

OP

PO = 12mW 775 785 795 nm

L

*

PO = 12mW 7 10 12 deg.

//

*

PO = 12mW 18 25 32 deg.

⊥

VR (PIN) = 5V 0.1 µ A

R

PO = 12mW, VR (PIN) = 5V 0.3 mA

P

PO = 12mW –2.0 +2.0 deg.

X

PO = 12mW –3.0 +3.0 deg.

Y

PO = 12mW, f = 600Hz, duty10% to 90%

r

410%

1

Semiconductor Laser LNC703PS

P

15

12.5

10.0

(mW)

O

7.5

5.0

Radiant power P

2.5

0

06020 40

Operating current IOP (mA)

2

10

(mA)

th

10

O

I

th

— I

— Ta

OP

I — V

200

Ta = 25˚C

100

0

Current I (mA)

–100

–200

–4 –2 0 2 4

3

10

(mA)

OP

2

10

Voltage V (V)

I

— Ta

OP

P

= 12mW

O

Far field pattern

100

80

O

60

40

Relative radiant power ∆P

20

0

40 20 0 20 40

500

400

(µA)

P

300

θ//θ

Angle θ (deg.)

I

— Ta

P

V
PO = 12mW

⊥

R

(PIN) = 5V

Threshold current I

1
– 10 10 5030 70

Ambient temperature Ta (˚C )

P

— Ta

20

15

(mW)

O

10

Radiant power P

5

0
– 10 10 30 50 70

O

Ambient temperature Ta (˚C )

Operating current I

10

– 10 10 5030 70

Ambient temperature Ta (˚C )

I

— Ta

2

10

10

(nA)

d

1

–1

10

PIN dark current I

–2

10

–3

10

– 10

d

VR (PIN) = 30V

10 30 7050

Ambient temperature Ta (˚C )

200

PIN photo current I

100

–10 10 30 50 70

Ambient temperature Ta (˚C )

2