Panasonic LNC702PS Datasheet

Semiconductor Laser

LNC702PS

GaAlAs Semiconductor Laser

ø1.0 min.

+0

ø5.6

–0.025

ø4.3±0.1

ø3.55±0.1

Unit : mm

2

Features

Low threshold current
Stable single horizontal mode oscillation
Low drooping

Applications

Optical data processing devices
Laser beam printers

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Radiant power P

Reverse voltage

Laser V

PIN VR (PIN) 30 V

O

R

Power dissipation Pd (PIN) 60 mW
Operating ambient temperature
Storage temperature T

T

opr
stg

5mW
2V

–10 to +60 ˚C

– 40 to +85 ˚C

PDLD

13

2

Junction plane
Reference plane

Reference slot

Reference plane

3-ø0.45

1: LD Anode
2: Common Case
3: PD Cathode

110˚±1˚

0.4±0.1

1.0±0.1

2.3±0.2

0.25

1.27±0.07

1.2±0.1

6.5±0.5

13

ø2.0

Bottom view

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Threshold current I
Operating current I

OP

Operating voltage V
Oscillation wavelength λ

Radiation angle

Horizontal direction

Vertical direction

L

θ

//

θ

⊥

PIN photo current I
Reverse current (DC) I

Optical axis
accuracy

*1

The radiation angle is indicated as half full angle.

*2

Sampling inspections are to be performed.

X direction
Y direction

On each wafer, n = 10 samplings are to be performed, with an evaluation criterion of zero rejects.

θ
θ

CW 15 25 40 mA

th

CW PO = 5mW 20 35 50 mA
CW PO = 5mW 1.9 2.5 V

OP

*2

CW PO = 5mW 780 795 810 nm

*1

CW PO = 5mW 8 12 15 deg.

*1

CW PO = 5mW 20 33 45 deg.
CW PO = 5mW,

P

VR (PIN) = 15V 0.1 µA

R

CW PO = 5mW –2.0 +2.0 deg.

X

CW PO = 5mW –3.0 +3.0 deg.

Y

VR (PIN) = 5V

0.3 0.8 1.6 mA

1

Semiconductor Laser LNC702PS

P

6

5

4

(mW)

O

3

2

Radiant power P

1

0

06020 40

Operating current IOP (mA)

2

10

(mA)

th

10

O

I

th

— I

— Ta

OP

I — V

200

Ta = 25˚C

100

0

Current I (mA)

–100

–200

–4 –2 0 2 4

3

10

(mA)

OP

2

10

Voltage V (V)

I

— Ta

OP

PO = 5mW

Far field pattern

100

80

O

60

40

Relative radiant power ∆P

20

0

40 20 0 20 40

Angle θ (deg.)

900

800

(µA)

P

700

I

P

— Ta

θ//θ

V
PO = 5mW

⊥

(PIN) = 5V

R

Threshold current I

1
– 10 10 5030 70

Ambient temperature Ta (˚C )

P

— Ta

10

8

(mW)

O

6

4

Radiant power P

2

0
– 10 10 30 50 70

O

Ambient temperature Ta (˚C )

Operating current I

10

– 10 10 5030 70

Ambient temperature Ta (˚C )

I

— Ta

2

10

10

(nA)

d

1

–1

10

PIN dark current I

–2

10

–3

10

– 10

d

VR (PIN) = 15V

10 30 7050

Ambient temperature Ta (˚C )

600

PIN photo current I

500

–10 10 30 50 70

Ambient temperature Ta (˚C )

2