Panasonic LNC701PS Datasheet

Semiconductor Laser

LNC701PS

GaAlAs Semiconductor Laser

Features

Low threshold current
Stable single horizontal mode oscillation
Long lifetime, high reliability

Applications

Optical data processing devices
Optical disk memory drive
Optical measuring equipment

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Radiant power P

Reverse voltage

Laser V

PIN VR (PIN) 30 V

O

R

Power dissipation Pd (PIN) 100 mW
Operating ambient temperature
Storage temperature T

T

opr
stg

35 mW

2V

–10 to +60 ˚C

– 40 to +80 ˚C

ø1.0 min.

0.4±0.1

2.3±0.2

1.27

1.2±0.1

6.5±0.5

110˚±1˚

1.0±0.1

0.25

0.5 max.

ø2.0

Bottom view

+0

ø5.6

–0.025

ø4.3±0.1

ø3.55±0.1

Y

Kovar glass

Z

ø1.2 max.
3-ø0.45

2

13

X

Junction plane

Reference slot

LD pellet
Reference plane

1: LD anode
2: Common case
3: PD cathode

Unit : mm

2

PDLD

13

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Threshold current I
Operating current I

OP

Operating voltage V
Oscillation wavelength λ

Radiation angle

Horizontal direction

Vertical direction

*1

θ

*1

θ

Differential efficiency η CW PO = 3 - 30mW 0.8 1.0 1.2
PIN photo current I
Reverse current (DC) I

Optical axis
accuracy

*1

The radiation angle is indicated as the full angle at half maximum.

X direction
Y direction

θ
θ

CW 10 20 30 mA

th

CW PO = 30mW 30 55 70 mA
CW PO = 30mW 2.0 2.5 V

OP

CW PO = 30mW 780 785 790 nm

L

CW PO = 30mW 8.5 10 11.5 deg.

//

CW PO = 30mW 23 25 28 deg.

⊥

CW PO = 30mW,

P

VR (PIN) = 15V 0.1 µA

R

CW PO = 30mW –2.0 +2.0 deg.

X

CW PO = 30mW –3.0 +3.0 deg.

Y

VR (PIN) = 5V

0.3 mA

1

Semiconductor Laser LNC701PS

P

60

50

40

(mW)

O

30

20

Radiant power P

10

0

0 12040 80

Operating current IOP (mA)

2

10

(mA)

th

10

O

I

th

— I

— Ta

OP

I — V

200

Ta = 25˚C

100

0

Current I (mA)

–100

–200

–4 –2 0 2 4

3

10

(mA)

OP

2

10

Voltage V (V)

I

— Ta

OP

PO = 30mW

Far field pattern

100

80

O

60

40

Relative radiant power ∆P

20

0

40 20 0 20 40

Angle θ (deg.)

400

300

(µA)

P

200

I

P

— Ta

θ//θ

V
PO = 30mW

⊥

(PIN) = 5V

R

Threshold current I

1
– 10 10 5030 70

Ambient temperature Ta (˚C )

P

— Ta

60

50

40

(mW)

O

30

20

O

Radiant power P

10

0
– 10 10 30 50 70

Ambient temperature Ta (˚C )

Operating current I

10

– 10 10 5030 70

Ambient temperature Ta (˚C )

I

— Ta

2

10

10

(nA)

d

1

–1

10

PIN dark current I

–2

10

–3

10

– 10

d

VR (PIN) = 30V

10 30 7050

Ambient temperature Ta (˚C )

100

PIN photo current I

0

–10 10 30 50 70

Ambient temperature Ta (˚C )

2