Panasonic LNA4905L Datasheet

Infrared Light Emitting Diodes

LNA4905L

GaAs Infrared Light Emitting Diode

For optical control equipment

■ Features

• High output power, high-efficiency : (15 mW min.)

• Quick response, high speed modulation (f

• Transparent epoxy resin package

■ Absolute Maximum Ratings Ta=25°C

Parameter Symbol Ratings Unit

Power dissipation P
Forward current(DC) I
Pulse forward current

*

Reverse voltage(DC) V
Operating ambient temperature T
Storage temperature T

Note) * : f=100 Hz, Duty cycle=0.1%

D

F

I

FP

R

opr

stg

=30 MHz typ.)

C

190 mW
100 mA

1A
3V

−25 to +85 °C

−30 to +100 °C

5.7±0.2

φ5±0.2

2 Max. Not soldered

2-1±0.15

2-0.6±0.15

1

*

2.54

Note 1. * : Indicates root dimensions of lead.

2. A dimension is as a reference figure
as coming with no a public difference.

5.7±0.2

1

4.4±0.3

1

12.0±1.0

14.0±1.0

2

Unit : mm

0.6±0.15

1 : Anode
2 : Cathode

■ Electro-optical Ta=25°C±3°C

Parameter Symbol Conditions min typ max Unit

Total power output P
Peak emission wavelength λ

O

P

Spectral half band width ∆λ IF=50 mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I

R

Half-power angle θ

Note) 1. Cut-off frequency : 30 MHz

2. LED might radiate red light under large current drive.

IF=50 mA 15 mW
IF=50 mA 880 nm

IF=100 mA 1.7 2.1 V

F

VF=3 V 10 µA
The angle when the beam intensity is halved

15 deg

1