Panasonic LNA4801L Datasheet

Infrared Light Emitting Diodes

Infrared Light Emitting Diodes

LNA4801L

GaAlAs Infrared Light Emitting Diode

For optical control systems

Features

Fast response and high-speed modulation capability :
f

= 20 MHz (typ.)

C

Wide directivity : θ = 22 deg. (typ.)
Transparent epoxy resin package

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100Hz, Duty cycle = 0.1 %

D

F

*

FP

R

T

opr

stg

190 mW
100 mA

1A
3V

–25 to +85 ˚C

–30 to +100 ˚C

5.0±0.2

15.0±1.0

(1.5)

4.5±0.3 0.61.0

ø3.8±0.2
ø3.0±0.2

2.54

1

2

2-0.8 max.

2-0.5±0.1

1.7

Unit : mm

Not soldered 2.0 max.

0.5±0.1

1: Anode
2: Cathode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Center radiant intensity I
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 40 nm
Forward voltage (DC) V
Reverse current (DC) I
Half-power angle θ
Cutoff frequency f

*

Frequency when modulation optical power decreases by 3dB from 1MHz

C

IF = 50mA 12 mW/sr

e

IF = 50mA 860 nm

P

IF = 100mA 1.6 1.9 V

F

VR = 3V 10 µA

R

The angle in which radiant intencity is 50%

*

I

= 50mA + 10mA

FP

p-p

PO(fCMHz)

10 log

(

PO(1MHz)

22 deg.
20 MHz

= – 3

)

1

LNA4801L Infrared Light Emitting Diodes

I

— Ta

120

100

(mA)

F

80

60

40

20

Allowable forward current I

0
– 25

F

0 20406080100

Ambient temperature Ta (˚C )

∆I

— I

2

10

e

10

1

e

FP

(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C

(1)

(2)

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

Pulse forward current I

–2

10

–1

10

11010

Duty cycle (%)

V

F

(V)

F

2.2

1.8

1.4

— Ta

tw = 10µs
Ta = 25˚C

IF = 100mA

50mA

4

10

3

10

(mA)

FP

2

10

10

1

Pulse forward current I

–1

10

2

0

10

e

1

I

— V

FP

13524

F

tw = 10µs
f = 100Hz
Ta = 25˚C

Forward voltage VF (V)

∆I

— Ta

e

IF = 50mA

–1

10

Relative radiant intensity I∆

–2

10

1

10

2

10

Pulse forward current IFP (mA)

λ

— Ta

920

900

(nm)

P

880

860

840

P

IF = 50mA

Peak emission wavelength λ

820

– 40 0 40 80 120

Ambient temperature Ta (˚C )

Forward voltage V

1.0

0.6

3

10

– 40 0 40 80 120

100

80

60

40

Relative radiant intensity (%)

20

0

750

Ambient temperature Ta (˚C )

Spectral characteristics

I

= 50mA

F

Ta = 25˚C

800 850 900 950 1000 1050

Wavelength λ (nm)

Relative radiant intensity ∆I

–1

10

– 40 0 40 80

Ambient temperature Ta (˚C )

Directivity characteristics

0˚ 10˚ 20˚

100

90
80
70
60
50
40
30
20

Relative radiant intensity (%)

30˚

40˚

50˚

60˚
70˚

80˚
90˚

2