Panasonic LNA4602L Datasheet

Infrared Light Emitting Diodes

LNA4602L

GaAlAs Infrared Light Emitting Diode

For optical control systems

Unit: mm

■ Features

• High-power output, high-efficiency

• Light-emitting pattern of almost point source

• Ultra-miniature, thin side-view type package

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Ratings Unit

Pulse forward current
Reverse voltage (DC) V
Operating ambient temperature T
Storage temperature T

Note) *: f = 100 Hz, Duty Cycle = 0.1%

*

I

FP

R

opr

stg

1.2 A

−20 to +60 °C

−30 to +70 °C

3V

4.8±0.3

2.4 2.4

12.8 min.
10 min.

R1.75±0.1

4.5±0.3

2.8

2− 0.98±0.2

1.8

2− 0.45±0.15 0.45±0.15

21

2.54

2.54±0.25

φ3.5±0.2

Not soldered

4.2±0.3

2.3 1.9

1.2

1.66±0.25

1: Cathode
2: Anode

■ Electro-optical Characteristics Ta = 25°C

Parameter Symbol Conditions min typ max Unit

Radiant power P
Peak emission wavelength λ

O

P

Spectral half band width ∆λ IF = 50 mA 35 n m
Forward voltage (DC) V
Peak forward voltage V
Reverse current (DC) I

FP

R

Half-power angle θ

Note) 1. ∆PO≤35% at t = 10 000 shot

32 ms

1 s (1 shot)

2. Frequency that the modulated total output power decreases by 3 dB from that of at 1 MHz.

Cut-off Frequcency: 200 MHz fC: 10 log

IF = 50 mA 3 mW
IF = 50 mA 850 nm

IF = 50 mA 1.5 1.9 V

F

IFP = 1 A, tW = 0.14 ms 2.9 3.8 V
VR = 3 V 100 µA
The angle in which radiant intencity is 50%

30 °

f = 500 Hz, Duty = 7%

PO (fC MHz)

PO (1 MHz)

= −3

1