Panasonic LNA2904L Datasheet

Infrared Light Emitting Diodes
LNA2904L
GaAs Infrared Light Emitting Diode
For optical control systems
ø5.0±0.2
Unit : mm
Features
High-power output, high-efficiency : Ie = 10 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current High center radiant intensity Transparent epoxy resin package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P Forward current (DC) I Pulse forward current I Reverse voltage (DC) V Operating ambient temperature Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D
F
*
FP
R
T
opr
stg
160 mW 100 mA
1.5 A 3V
–25 to +85 ˚C
– 40 to +100 ˚C
7.65±0.2
1.0
1.0
11.5±1.0
3.9±0.3
13.5±1.0
2
ø6.0±0.2
2.54
1
Not soldered
2-1.0±0.15 2-0.6±0.15
0.6±0.15
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Center radiant intensity I Peak emission wavelength λ Spectral half band width ∆λ IF = 50mA 50 nm Forward voltage (DC) V Reverse current (DC) I Capacitance between pins
C
Half-power angle θ
IF = 50mA 10 mW/sr
e
IF = 50mA 950 nm
P
IF = 100mA 1.35 1.6 V
F
VR = 3V 10 µA
R
VR = 0V, f = 1MHz 50 pF
t
The angle in which radiant intencity is 50%
20 deg.
1
LN2904L Infrared Light Emitting Diodes
I
— Ta
120
100
(mA)
F
80
60
40
20
Allowable forward current I
0 – 25
F
0 20406080100
Ambient temperature Ta (˚C )
I
— I
e
3
10
e
2
10
10
1
(2)
FP
(1) tw = 10µs
f = 100Hz (2) DC Ta = 25˚C
(1)
I
— Duty cycle
FP
2
10
10
(A)
FP
1
–1
10
–2
Pulse forward current I
10
–3
10
10
–1
–2
10
Duty cycle (%)
V
F
(V)
F
1.6
1.2
0.8
1
— Ta
tw = 10µs Ta = 25˚C
10 10
IF = 100mA
50mA 10mA
10
(A)
FP
1
–1
10
Pulse forward current I
–2
10
2
0
10
e
1
I
— V
FP
13524
F
t
= 10µs
w
f = 100Hz Ta = 25˚C
Forward voltage VF (V)
I
— Ta
e
IF = 50mA
–1
Relative radiant intensity I
10
–2
10
1
10 10
2
10
Pulse forward current IFP (mA)
λ
— Ta
1000
980
(nm)
P
960
940
920
P
IF = 50mA
Peak emission wavelength λ
900
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Forward voltage V
0.4
3
4
10
0 – 40 0 40 80 120
Ambient temperature Ta (˚C )
Spectral characteristics
100
80
60
40
Relative radiant intensity (%)
20
0
900 940 980 1020 1060 1100
860
I
= 50mA
F
Ta = 25˚C
Relative radiant intensity I
–1
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
10˚ 20˚
100
90 80 70 60 50
40 30
Relative radiant intensity (%)
20
30˚
40˚
50˚
60˚ 70˚
80˚ 90˚
Wavelength λ (nm)
2
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