Panasonic LNA2701L Datasheet

Infrared Light Emitting Diodes

LNA2701L

GaAs Bi-directional Infrared Light Emitting Diode

For light source of VCR (VHS System)

Features

Two-way directivity
High-power output, high-efficiency : PO = 1.8 mW (min.)
Small resin package
Long lifetime, high reliability
Thin type package modified from LN59

Applications

Light source for tape end sensor of VCR and video camera
recorder of VHS system
Light source for 2-bit photo sensor

0.5 max.

2.4±0.2

16.9±1.0 3.8±0.2

Not soldered 2.0

8˚

26.5˚

0.81.0

0.8

(1.5)

2.8±0.2

1

2.0

8˚

26.5˚

2-C0.5

ø1.4±0.2

2-0.7 max.

2-0.5±0.1

2

0.15

8˚

8˚

8˚

2.8±0.2

1.3±0.2

Unit : mm

8˚

2-R0.7

8˚

0.5±0.1

1: Anode
2: Cathode

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100 Hz, Duty cycle = 0.1 %

D

F

*

FP

R

T

opr
stg

75 mW
50 mA

1A
3V

–25 to +65 ˚C

– 30 to +85 ˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Radiant intensity at center I
Peak emission wavelength λ
Spectral half band width ∆λ IF = 20mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins

*

Radiant intensity Ie shows each value of intensity I1 and I2 in two directions.

I

1

*

IF = 50mA 1.2 mW/sr

e

IF = 20mA 940 nm

P

IF = 50mA 1.3 1.5 V

F

VR = 3V 10 µA

R

C

VR = 0V, f = 1MHz 35 pF

t

I

2

1

Infrared Light Emitting Diodes LNA2701L

∆I

60

50

(mA)

F

40

30

20

10

Allowable forward current ∆I

0

0 20406080100

– 25

Ambient temperature Ta (˚C )

∆Ie — I

2

10

e

10

1

— Ta

F

FP

(1) tw = 10µs

f = 100Hz
(2) DC
Ta = 25˚C

(2)

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

Pulse forward current I

–2

10

–1

10

11010

tw = 10µs
Ta = 25˚C

80

70

60

(mA)

F

50

40

30

20

Forward current ∆I

10

2

0

0 0.4 0.8 1.2 1.6

Duty cycle (%)

V

— Ta

1.6

F

(1)

(V)

F

1.2

0.8

IF = 50mA

10mA

1mA

3

10

e

2

10

∆I

F

— V

∆

F

Ta = 25˚C

Forward voltage VF (V)

∆I

— Ta

e

= 20mA

I

F

–1

10

Relative radiant intensity ∆I

–2

10

1

10 10

2

Pulse forward current IFP (mA)

λ

— Ta

1000

980

(nm)

P

960

940

920

P

IF = 20mA

Peak emission wavelength λ

900

– 40 0 40 80 120

Ambient temperature Ta (˚C )

Forward voltage V

0.4

3

10

0
– 40 0 40 80 120

100

80

60

40

Relative radiant intensity (%)

20

0

860

Ambient temperature Ta (˚C )

Spectral characteristics

IF = 20mA
Ta = 25˚C

900 940 980 1020 1060 1100

Wavelength λ (nm)

Relative radiant intensity ∆I

10

– 25 20 600 40 80 100

Ambient temperature Ta (˚C )

θ Direction light

distribution characteristics

0˚

100

100

90
80
70
60
50
40
30
20

20
30
40
50
60
70
80
90

180˚

30˚30˚

Relative radiant
intensity (%)

150˚150˚

60˚60˚

90˚90˚

120˚120˚

2