Panasonic LNA2606L Datasheet
Infrared Light Emitting Diodes
LNA2606L
GaAlAs on GaAs Infrared Light Emitting Diode
For optical control systems
■ Features
• High-power output, high-efficiency: PO = 9 mW min.
• Emitted light spectrum suited for silicon photodetectors
• Ultra-miniature, thin side-view type package
• Long lifetime, high reliability
Unit: mm
1.95±0.25
3.0±0.3
φ1.1
R0.5
1.1 0.8 max.
2.4
1.1 0.8
3.5±0.3
1.4±0.2
0.50.9
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Ratings Unit
Power dissipation P
Forward current (DC) I
Pulse forward current
*
Reverse voltage (DC) V
Operating ambient temperature T
Storage temperature T
D
F
I
FP
R
opr
−40 to +100 °C
stg
−25 to +85 °C
12 min.
Not soldered 2.15 max.
21
80 mW
50 mA
1A
3V
2− 0.5±0.15
2.54
1: Anode
2: Cathode
Note) *: f = 100 Hz, Duty Cycle = 0.1%
■ Electro-Optical Characteristics Ta = 25°C
Parameter Symbol Conditions min typ max Unit
Radiant power P
Peak emission wavelength λ
O
P
Spectral half band width ∆λ IF = 50 mA 50 n m
Forward voltage (DC) V
Reverse current (DC) I
R
Capacitance between pins C
Half-power angle θ
IF = 50 mA 9 19 mW
IF = 50 mA 940 nm
IF = 50 mA 1.3 1.6 V
F
VR = 3 V 10 µA
VR = 0 V, f = 1 MHz 35 pF
t
The angle in which radiant intencity is 50%
20 °
0.3±0.15
1
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