Panasonic LNA2603F Datasheet

Infrared Light Emitting Diodes

LNA2603F

GaAs Infrared Light Emitting Diode

For optical control systems

Features

High-power output, high-efficiency : PO = 6 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :

λ

= 940 nm (typ.)

P

Long lifetime, high reliability
Thin side-view type package

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100 Hz, Duty cycle = 0.1 %

D
F

*

FP

R

T

opr

stg

160 mW
100 mA

1.5 A
3V

–25 to +85 ˚C

– 40 to +100 ˚C

4.5±0.15

3.9±0.2512.8 min.

(2.95) 1.5±0.2

12

2.54

Not soldered 0.8 max.

2-1.2±0.3

2-0.45±0.15

1.6±0.15

0.8±0.13.5±0.15

0.45±0.15

Unit : mm

2.1±0.15

1: Anode
2: Cathode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins

C
Rise time t
Fall time t
Half-power angle θ

IF = 50mA 3 6 mW

O

IF = 50mA 940 nm

P

IF = 100mA 1.3 1.6 V

F

VR = 3V 10 µA

R

VR = 0V, f = 1MHz 45 pF

t

r

I

= 100mA

f

FP

The angle in which radiant intencity is 50%

1 µs
1 µs

80 deg.

1

Infrared Light Emitting Diodes LNA2603F

I

— Ta

120

100

(mA)

F

80

60

40

20

Allowable forward current I

0
– 25

F

0 20406080100

Ambient temperature Ta (˚C )

∆P

— I

O

3

10

O

2

10

10

1

FP

(1) t

= 10µs

w

f = 100Hz
(2) DC
Ta = 25˚C

(2)

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

–2

Pulse forward current I

10

–3

10

10

–1

–2

10

tw = 10µs
Ta = 25˚C

10 10

1

2

4

10

3

10

(mA)

FP

2

10

10

1

Pulse forward current I

–1

10

0

Duty cycle (%)

V

— Ta

1.6

F

IF = 100mA

1.2

(V)

(1)

F

0.8

50mA
1mA

10

O

1

I

— V

FP

13524

F

tw = 10µs
f = 100Hz
Ta = 25˚C

Forward voltage VF (V)

∆P

— Ta

O

IF = 50mA

Relative radiant power ∆P

–1

10

–2

10

110

2

10

10

Pulse forward current IFP (mA)

λ

— Ta

1000

980

(nm)

P

960

940

920

P

IF = 50mA

Peak emission wavelength λ

900

– 40 0 40 80 120

Ambient temperature Ta (˚C )

Forward voltage V

0.4

3

4

10

0
– 40 0 40 80 120

Ambient temperature Ta (˚C )

Spectral characteristics

100

80

60

40

Relative radiant intensity (%)

20

0

900 940 980 1020 1060 1100

860

I

= 50mA

F

Ta = 25˚C

Relative radiant power ∆P

–1

10

– 40 0 40 80

Ambient temperature Ta (˚C )

Directivity characteristics

0˚ 10˚ 20˚ 30˚

100

80
60
40

Relative radiant

20

intensity(%)

40˚

50˚

60˚
70˚

80˚
90˚
100˚
110˚

120˚

130˚

140˚

Wavelength λ (nm)

2