Panasonic LNA2601L Datasheet

Infrared Light Emitting Diodes

LNA2601L

GaAs Infrared Light Emitting Diode

For optical control systems

Features

High-power output, high-efficiency
Emitted light spectrum suited for silicon photodetectors
Infrared light emission close to monochromatic light : λP = 950 nm
Ultra-miniature, thin side-view type package

2.4 0.8 max.1.1

3.5±0.312 min.

Unit : mm

1.95±0.25

3.0±0.3

0.8

1.1

ø1.1

R0.5

2-0.5±0.15 0.3±0.15

1.4±0.2

0.50.9

Not Soldered 2.15 max.

2.54

12

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100 Hz, Duty cycle = 0.1 %

D

F

*

FP

R

T

opr

stg

75 mW
50 mA

1A
3V

–25 to +85 ˚C

– 40 to +100 ˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins

C

Half-power angle θ

IF = 50mA 1.5 mW

O

IF = 50mA 950 nm

P

IF = 50mA 1.5 V

F

VR = 3V 10 µA

R

VR = 0V, f = 1MHz 35 pF

t

The angle in which radiant intencity is 50%

20 deg.

1: Anode
2: Cathode

1

Infrared Light Emitting Diodes LNA2601L

I

— Ta

60

50

(mA)

F

40

30

20

10

Allowable forward current I

0
– 25

F

0 20406080100

Ambient temperature Ta (˚C )

∆PO — I

2

10

O

10

1

FP

(1) tw = 10µs

f = 100Hz
(2) DC
Ta = 25˚C

(2)

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

Pulse forward current I

–2

10

–1

10

11010

tw = 10µs
Ta = 25˚C

(mA)

F

Forward current I

2

80

70

60

50

40

30

20

10

0

0 0.4 0.8 1.2 1.6

Duty cycle (%)

V

— Ta

1.6

F

(1)

(V)

F

1.2

0.8

IF = 50mA

10mA

1mA

3

10

O

2

10

I

— V

F

F

Ta = 25˚C

Forward voltage VF (V)

∆P

— Ta

O

I

= 20mA

F

–1

10

Relative radiant power ∆P

–2

10

1

10 10

Pulse forward current IFP (mA)

λ

— Ta

1000

980

(nm)

P

960

940

920

P

Peak emission wavelength λ

900

– 40 0 40 80 120

Ambient temperature Ta (˚C )

2

2

IF = 20mA

Forward voltage V

0.4

3

10

0
– 40 0 40 80 120

100

80

60

40

Relative radiant intensity (%)

20

0

860

Ambient temperature Ta (˚C )

Spectral characteristics

I

= 50mA

F

Ta = 25˚C

900 940 980 1020 1060 1100

Wavelength λ (nm)

Relative radiant power ∆P

10

– 25 20 600 40 80 100

Ambient temperature Ta (˚C )

Directivity characteristics

0˚ 10˚ 20˚

100

90

80
70
60
50
40
30

Relative radiant intensity (%)

20

30˚

40˚

50˚

60˚
70˚

80˚
90˚