Panasonic LN78 Datasheet

Infrared Light Emitting Diodes

LN78

GaAlAs Infrared Light Emitting Diode

For optical control cystems

Features

High-power output, high-efficiency : PO = 10 mW (typ.)
High-speed modulation capability : fC = 12 MHz

ø2.4

1.5

2.4

3.9±0.3

2.8

12.8 min.

12

4.5±0.3

2.54

Not soldered

2-1.2±0.3

2-0.45±0.15

2.9±0.25

1.2

0.9 0.8

Unit : mm

1.7±0.2

0.45±0.15

R1.2

Absolute Maximum Ratings (Ta = 25˚C)

R0.6

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100 Hz, Duty cycle = 0.1 %

D
F

*

FP

R

T

opr

stg

180 mW
100 mA

1A
3V

–25 to+85 ˚C

–30 to +100 ˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins

C

Half-power angle θ The angle in which radiant intencity is 50% 40 deg.
Cutoff frequency f

*

Frequency when modulation optical power decreases by 3dB from 1MHz.

C

IF = 50mA 6 10 mW

O

IF = 50mA 880 nm

P

IF = 100mA 1.5 1.8 V

F

VR = 3V 10 µA

R

VR = 0V, f = 1MHz 50 pF

t

*

I

= 50mA + 10mA

FP

p-p

PO(fCMHz)

10 log

(

PO(1MHz)

12 MHz

= – 3

)

1: Cathode
2: Anode

1

Infrared Light Emitting Diodes LN78

I

— Ta

120

100

(mA)

F

80

60

40

20

Allowable forward current I

0
– 25

F

0 20406080100

Ambient temperature Ta (˚C )

∆P

— I

2

10

O

10

1

O

FP

(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C

(2)

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

Pulse forward current I

–2

10

–1

10

11010

2

4

10

3

10

(mA)

FP

2

10

10

1

Pulse forward current I

–1

10

0

Duty cycle (%)

V

— Ta

2.2

F

(1)

(V)

F

1.8

IF = 100mA

1.4
50mA

10

O

1

I

— V

FP

13524

F

tw = 10µs
f = 100Hz
Ta = 25˚C

Forward voltage VF (V)

∆P

— Ta

O

IF = 50mA

–1

10

Relative radiant power ∆P

–2

10

1

10

2

10

Pulse forward current IFP (mA)

λ

— Ta

920

900

(nm)

P

880

860

840

P

IF = 50mA

Peak emission wavelength λ

820

– 40 0 40 80 120

Ambient temperature Ta (˚C )

Forward voltage V

1.0

0.6

3

10

– 40 0 40 80 120

100

80

60

40

Relative radiant intensity (%)

20

0

750

Ambient temperature Ta (˚C )

Spectral characteristics

I

= 50mA

F

Ta = 25˚C

800 850 900 950 1000 1050

Wavelength λ (nm)

Relative radiant power ∆P

–1

10

– 40 0 40 80

Ambient temperature Ta (˚C )

Directivity characteristics

0˚ 10˚ 20˚

100

90
80
70
60
50
40
30

Relative radiant intensity(%)

20

30˚

40˚

50˚

60˚
70˚

80˚
90˚

2