Panasonic LN75X Datasheet

Infrared Light Emitting Diodes
LN75X
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz
ø3.5±0.2
4.8±0.3
2.4 2.4
2.8
Unit : mm
4.5±0.3
Not soldered
1.8
1.0
2-0.98±0.2 2-0.45±0.15
4.2±0.3
2.3 1.9
0.45±0.15
2.54
R1.75
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P Forward current (DC) I Pulse forward current I Reverse voltage (DC) V Operating ambient temperature Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D F
*
FP
R
T
opr
stg
180 mW 100 mA
1A 3V
–25 to +85 ˚C
–30 to+100 ˚C
12
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power P Peak emission wavelength λ Spectral half band width ∆λ IF = 50mA 50 nm Forward voltage (DC) V Reverse current (DC) I Capacitance between pins
C
Half-power angle θ The angle in which radiant intencity is 50% 25 deg. Cutoff frequency f
*
Frequency when modulation optical power decreases by 3dB from 1MHz.
C
IF = 50mA 6 10 mW
O
IF = 50mA 880 nm
P
IF = 100mA 1.5 1.8 V
F
VR = 3V 10 µA
R
VR = 0V, f = 1MHz 50 pF
t
*
I
= 50mA + 10mA
FP
p-p
PO(fCMHz)
10 log
(
PO(1MHz)
12 MHz
= – 3
)
1.2
1: Cathode 2: Anode
1
Infrared Light Emitting Diodes LN75X
I
— Ta
120
100
(mA)
F
80
60
40
20
Allowable forward current I
0 – 25
F
0 20406080100
Ambient temperature Ta (˚C )
P
— I
2
10
O
10
1
O
FP
(1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C
(2)
I
— Duty cycle
FP
2
10
10
(A)
FP
1
–1
10
Pulse forward current I
–2
10
–1
10
11010
2
4
10
3
10
(mA)
FP
2
10
10
1
Pulse forward current I
–1
10
0
Duty cycle (%)
V
— Ta
2.2
F
(1)
(V)
F
1.8
IF = 100mA
1.4 50mA
10
O
1
I
— V
FP
13524
F
tw = 10µs f = 100Hz Ta = 25˚C
Forward voltage VF (V)
P
— Ta
O
IF = 50mA
–1
10
Relative radiant power P
–2
10
1
10
2
10
Pulse forward current IFP (mA)
λ
— Ta
920
900
(nm)
P
880
860
840
P
IF = 50mA
Peak emission wavelength λ
820
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Forward voltage V
1.0
0.6
3
10
– 40 0 40 80 120
100
80
60
40
Relative radiant intensity (%)
20
0
750
Ambient temperature Ta (˚C )
Spectral characteristics
I
= 50mA
F
Ta = 25˚C
800 850 900 950 1000 1050
Wavelength λ (nm)
Relative radiant power P
–1
10
– 40 0 40 80
Ambient temperature Ta (˚C )
Directivity characteristics
10˚ 20˚
100
90 80 70 60 50
40 30
Relative radiant intensity(%)
20
30˚
40˚
50˚
60˚ 70˚
80˚ 90˚
2
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