Panasonic LN69 Datasheet

Infrared Light Emitting Diodes

LN69

GaAs Infrared Light Emitting Diode

For optical control systems

Features

High-power output, high-efficiency : Ie = 3.5 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors :

λ

= 940 nm (typ.)

P

Good radiant power output linearity with respect to input current
Long lifetime, high reliability
ø3 plastic package

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100 Hz, Duty cycle = 0.1 %

D

F

*

FP

R

T

opr

stg

75 mW
50 mA

1A
3V

–25 to +85 ˚C

– 40 to +100 ˚C

5.5±0.215.5±1.0

(1.5)

4.5±0.3 1.01.0

1.6

ø3.6±0.2
ø3.0±0.2

1

2.54

Not soldered 2.0 max.

2-0.8 max.

2-0.5±0.1

2

0.5±0.1

Unit : mm

1: Anode
2: Cathode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Cente radiant Intensity I
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins

C

Half-power angle θ

IF = 20mA 3.5 mW/sr

e

IF = 50mA 940 nm

P

IF = 50mA 1.3 1.5 V

F

VR = 3V 10 µA

R

VR = 0V, f = 1MHz 35 pF

t

The angle in which radiant intencity is 50%

15 deg.

1

LN69 Infrared Light Emitting Diodes

I

— Ta

60

50

(mA)

F

40

30

20

10

Allowable forward current I

0
– 25

F

0 20406080100

Ambient temperature Ta (˚C )

∆Ie — I

2

10

e

10

1

FP

(1) tw = 10µs

f = 100Hz
(2) DC
Ta = 25˚C

(2)

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

Pulse forward current I

–2

10

–1

10

11010

tw = 10µs
Ta = 25˚C

(mA)

F

Forward current I

2

80

70

60

50

40

30

20

10

0

0 0.4 0.8 1.2 1.6

Duty cycle (%)

V

— Ta

1.6

F

(1)

(V)

F

1.2

0.8

IF = 50mA

10mA

1mA

3

10

e

2

10

I

— V

F

F

Ta = 25˚C

Forward voltage VF (V)

∆I

— Ta

e

IF = 50mA

–1

10

Relative radiant intensity ∆I

–2

10

–3

10

–2

10

–1

10

Pulse forward current IFP (A)

λ

— Ta

1000

980

(nm)

P

960

940

920

P

IF = 50mA

Peak emission wavelength λ

900

– 40 0 40 80 120

Ambient temperature Ta (˚C )

Forward voltage V

0.4

1

0
– 40 0 40 80 120

Ambient temperature Ta (˚C )

Spectral characteristics

100

80

60

40

Relative radiant intensity (%)

20

0

860

I

= 50mA

F

Ta = 25˚C

900 940 980 1020 1060 1100

Wavelength λ (nm)

Relative radiant intensity ∆I

10

20 60– 20 0 40 80

Ambient temperature Ta (˚C )

Directivity characteristics

0˚ 10˚ 20˚

100

90
80
70
60
50

40
30
20

30˚

40˚

50˚

Relative radiant intensity (%)

60˚
70˚

80˚
90˚

2