Infrared Light Emitting Diodes
LN671
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
5.3 max.
5.0±0.1
2.54±0.1
43
Unit : mm
1.8±0.3
0.8±0.2
Features
High-power output, high-efficiency : PO = 10 mW (typ.)
Fast response and high-speed modulation capability :
t
, tf = 30 ns(typ.)
r
Small plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D
F
*
FP
R
T
opr
stg
130 mW
70 mA
1A
3V
–25 to +85 ˚C
–30 to +100 ˚C
Epin ø3.2
1.0±0.3 1.0±0.1
4.0±0.1
13.5±0.1
4-0.6
4-0.5±0.15
1.0±0.1 1.0±0.3
12
10˚
10˚
5˚
5˚
10˚
10˚
4.3 max.
+0.1
–0.2
+0.1
0.2
–0.05
1: Anode
2: Common Cathode
3: NC
4: Common Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Rise time t
Fall time t
Half-power angle θ
IF = 50mA 6 10 mW
O
IF = 50mA 880 nm
P
IF = 50mA 1.4 1.8 V
F
VR = 3V 10 µA
R
I
r
f
= 50mA 30 ns
FP
I
= 50mA 30 ns
FP
The angle in which radiant intencity is 50%
50 deg.
1
LN671 Infrared Light Emitting Diodes
I
— Ta
120
100
(mA)
F
80
60
40
20
Allowable forward current I
0
– 25
F
0 20406080100
Ambient temperature Ta (˚C )
∆P
— I
O
3
10
O
2
10
10
1
(2)
FP
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
(1)
I
— Duty cycle
FP
2
10
10
(A)
FP
1
–1
10
–2
Pulse forward current I
10
–3
10
10
–1
–2
10
Duty cycle (%)
V
F
(V)
F
2.2
1.8
1.4
1
— Ta
tw = 10µs
Ta = 25˚C
10 10
= 50mA
I
F
3
10
2
10
(mA)
FP
10
1
–1
10
Pulse forward current I
–2
10
2
0
10
O
1
I
— V
FP
13524
FP
t
w
f = 100Hz
Ta = 25˚C
= 10µs
Pulse forward voltage VFP (V)
∆P
— Ta
O
IF = 50mA
Relative radiant power ∆P
–1
10
–2
10
110
2
10
10
Pulse forward current IFP (mA)
λ
— Ta
920
900
(nm)
P
880
860
840
P
IF = 50mA
Peak emission wavelength λ
820
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Forward voltage V
1.0
3
10
0.6
4
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Spectral characteristics
100
80
60
40
Relative radiant intensity (%)
20
0
800 850 900 950 1000 1050
750
I
= 50mA
F
Ta = 25˚C
Relative radiant power ∆P
–1
10
– 40 0 40 80
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative radiant intensity (%)
20
30˚
40˚
50˚
60˚
70˚
80˚
90˚
Wavelength λ (nm)
2