Panasonic 2SD2184 Datasheet

Transistor

2SD2184

Silicon NPN epitaxial planer type

For low-frequency output amplification
Complementary to 2SB1438

Features

■

●

High collector to emitter voltage V

●

Low collector to emitter saturation voltage V

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*1

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

.

CEO

Ratings

–55 ~ +150

150
150

1.5

150

5

1
1

CE(sat)

.

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank R S

h

FE1

120 ~ 240 170 ~ 340

Conditions

VCB = 75V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0

*1

VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA
IC = 500mA, IB = 25mA
IC = 500mA, IB = 25mA

*2

*2

VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

150
150

5

120

40

typ

max

0.11

0.8
90
12

*2

Pulse measurement

0.1

340

0.3

1.2

20

Unit

µA

V
V
V

V
V

MHz

pF

1

Transistor

2SD2184

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

100

)
V

(

30

BE(sat)

10

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0

0 20016040 12080

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

3

1

0.01 0.1 1 100.03 0.3 3

25˚C

Ta=–25˚C

100˚C

C

Collector current IC (A

IC/IB=20

)

V

CE

)

1200

1000

)

mA

(

800

C

600

400

Collector current I

200

0

012108264

)

Collector to emitter voltage VCE (V

hFE — I

500

FE

400

300

Ta=100˚C

200

100

25˚C

–25˚C

IB=8mA

C

7mA
6mA
5mA

4mA
3mA

2mA

1mA

Ta=25˚C

)

VCE=2V

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

200

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

CE(sat)

25˚C

fT — I

— I

Ta=100˚C

–25˚C

C

IC/IB=20

)

E

Ta=25˚C
V

=10V

CB

)

)
pF

(

Cob — V

60

50

ob

40

30

20

10

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

Ta=25˚C
f=1MHz
I

=0

E

)