Panasonic 2SD2179 Datasheet

Transistor

2SD2179

Silicon NPN epitaxial planer type

For low-frequency output amplification
Complementary to 2SB1446

Features

■

●

Low collector to emitter saturation voltage V

●

Complementary pair with 2SB1446.

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*1

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

Ratings

50
50

150

–55 ~ +150

5
7
5
1

CE(sat)

.

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

h

Rank classification

FE1

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank R S

h

FE1

120 ~ 240 170 ~ 340

Conditions

VCB = 20V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0

*1

VCE = 2V, IC = 500mA
VCE = 2V, IC = 2.5A
IC = 2A, IB = 100mA
IC = 2A, IB = 100mA

*2

*2

*2

*2

VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

50
50

5

120

60

typ

max

0.19

0.85
80
60

*2

Pulse measurement

0.1

340

0.3

1.2

70

Unit

µA

V
V
V

V
V

MHz

pF

1

Transistor

2SD2179

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

Ta=–25˚C

C

IC/IB=20

25˚C

100˚C

Collector current IC (A

)

V

CE

)

2.4

2.0

)
A

(

1.6

C

1.2

0.8

Collector current I

0.4

0

0108264

)

Collector to emitter voltage VCE (V

hFE — I

500

FE

400

300

200

100

Ta=100˚C

Ta=25˚C

IB=8mA

7mA
6mA
5mA

4mA
3mA

2mA
1mA

)

C

VCE=2V

25˚C

–25˚C

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

200

)

160

MHz

(

T

120

80

40

Transition frequency f

0

–1 –3 –10 –30 –100

Emitter current IE (mA

CE(sat)

Ta=100˚C

25˚C

fT — I

— I

–25˚C

E

C

IC/IB=20

)

VCB=10V
Ta=25˚C

)

)
pF

(

Cob — V

240

200

ob

160

120

80

40

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)