Panasonic 2SD2177 Datasheet

Transistors

2SD2177

Silicon NPN epitaxial planer type

For low-frequency output amplification

Complementary to 2SB1434

■ Features

• Low collector to emitter saturation voltage

• Ccomplementary pair with 2SB1434

• Allowing supply with the radial taping

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation
Junction temperature T
Storage temperature T

Note)*: Printed circuit board: Copper foil area of 1 cm2 or more, and the

board thickness of 1.7 mm for the collector portion

CBO

CEO

EBO

CP

C

*

P

C

j

stg

V

CE(sat)

50 V
50 V

5V
3A
2A
1W

150 °C

−55 to +150 °C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

−0.05

2.5±0.5 2.5±0.5

Note) In addition to the

lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.

1.2±0.1

+

0.1

0.45

−

0.05

1.05
±0.05 (1.45)

0.21.01.0

+0.1

−0.05

321

0.45

1: Emitter
2: Collector
3: Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW Type)

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V

1

Forward current transfer ratio

*

Collector to emitter saturation voltage
Base to emitter saturation voltage

1

*

*

1

CBO

CBO

CEO

EBO

h

FE1

h

FE2

V

CE(sat)IC

V

BE(sat)IC

Transition frequency f
Collector output capacitance C

Note)*1: Pulse measurement

2: Rank classification

*

Rank R S No-rank

h

FE1

120 to 240 170 to 340 120 to 340

Product of no-rank is not classified and have no indication for rank.

VCB = 20 V, IE = 0 0.1 µA
IC = 10 µA, IE = 050V
IC = 1 mA, IB = 050V
IE = 10 µA, IC = 05V

2

*

VCE = 2 V, IC = 200 mA 120 340
VCE = 2 V, IC = 1 A 80

= 1 A, IB = 50 mA 0.15 0.3 V
= 1 A, IB = 50 mA 0.85 1.2 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 110 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 23 35 pF

ob

1

2SD2177 Transistors

PC  T

1.2

)

1.0

W

(

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080 14020 10060

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.03

Copper plate at the collector
is more than 1 cm

1.7 mm in thickness

Ambient temperature Ta (°C

V

 I

BE(sat)

Ta = −25°C

25°C

100°C

0.1 0.3 1 3 10

Collector current IC (A

a

C

2

in area,

IC / IB = 10

)

IC  V

h

FE

25°C

−25°C

 I

CE

Ta = 25°C

IB = 8 mA

7 mA
6 mA
5 mA

4 mA
3 mA
2 mA
1 mA

C

VCE = 2 V

)

2.4

2.0

)
A

(

1.6

C

1.2

0.8

Collector current I

0.4

0

01024 86

)

Collector to emitter voltage VCE (V

500

FE

400

300

Ta = 100°C

200

100

Forward current transfer ratio h

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)
V

(

CE(sat)

0.003

0.001

Collector to emitter saturation voltage V

)

)

MHz

(

T

Transition frequency f

10

3

1

0.3

0.1

0.03

0.01

0.01 0.03

200

160

120

80

40

0

−1 −3 −10 −30 −100

V

 I

CE(sat)

Ta = 100°C

25°C

0.1 0.3 1 3 10

C

IC / IB = 20

−25°C

Collector current IC (A

fT  I

E

VCB = 10 V
T

a

Emitter current IE (mA

)

= 25°C

)

C

 V

60

)
pF

50

(

ob

40

30

20

10

Collector output capacitance C

0

1

ob

3 10 30 100

Collector to base voltage VCB (V

2

CB

IE = 0
f = 1 MHz

= 25°C

T

a

)