Panasonic 2SD2139 Datasheet

Po wer Transistors

2SD2139

Silicon NPN triple diffusion planar type

For high-current amplification ratio, power amplification

Features

■

●

High foward current transfer ratio h

●

Satisfactory linearity of foward current transfer ratio h

●

Allowing supply with the radial taping

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V
V
V
I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

CEO

EBO

FE

=25˚C)

C

Ratings

80
60

6
6
3
1

15

2

150

–55 to +150

FE

Unit

V
V
V
A
A
A

W

˚C
˚C

4.2±0.2

13.0±0.2

18.0±0.5
Solder Dip

C1.0

123

2.5±0.2 2.5±0.2

2.5±0.2

0.65±0.1

1.05±0.10.35±0.1

0.55±0.1

1.2±0.1

Unit: mm

5.0±0.1

1.010.0±0.2

90°

C1.0

2.25±0.2

0.55±0.1

1:Base
2:Collector
3:Emitter

MT4 Type Package

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency

*

hFE Rank classification

I
I
I
V
h
V
f

Rank Q P O

h

500 to 1000 800 to 1500 1200 to 2500

FE

=25˚C)

C

Symbol

CBO

CEO

EBO

CEO

*

FE

CE(sat)

T

Conditions

VCB = 80V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz

min

60

500

typ50max

100
100
100

2500

1

Unit

µA
µA
µA

V

V

MHz

1

Po wer Transistors 2SD2139

PC—Ta IC—V

20

)
W

(

C

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

(1) TC=Ta
(2) Without heat sink

(1)

(2)

V

CE(sat)—IC

25˚C

(P

C

–25˚C

=2.0W)

)

IC/IB=40

TC=100˚C

)

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

IB=1.6mA

1.4mA

1.2mA

1.0mA

TC=25˚C

0.8mA

0.6mA

0.4mA

Collector current I

0.2

0

012108264

Collector to emitter voltage VCE (V

hFE—I

C

10000

FE

3000

1000

300

100

30

Forward current transfer ratio h

10

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

–25˚C

Collector current IC (A

0.2mA

VCE=4V

)

6

5

)
A

(

4

C

3

2

Collector current I

1

0

02.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

1000

)

300

MHz

(

T

100

30

10

3

Transition frequency f

1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

VCE=4V

TC=100˚C

25˚C

–25˚C

fT—I

C

VCE=12V
f=10MHz
T

C

Collector current IC (A

)

=25˚C

)

Cob—V

1000

)
pF

(

300

ob

100

30

10

3

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)
A

(

Collector current I

)

Area of safe operation (ASO)

100

30

10

I

CP

C

0.03

0.01

t=10ms

3

I

C

1

0.3

0.1

1 10 100 10003 30 300

Collector to emitter voltage VCE (V

DC

Non repetitive pulse

=25˚C

T

C

1ms

)