Panasonic 2SD2138A, 2SD2138 Datasheet

Po wer Transistors

2SD2138, 2SD2138A

Silicon NPN triple diffusion planar type Darlington

For power amplification
Complementary to 2SB1418 and 2SB1418A

Features

■

●

High forward current transfer ratio hFE which has satisfactory linearity

●

Allowing supply with the radial taping

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD2138
2SD2138A
2SD2138

2SD2138A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Symbol

V

V

V
I

CP

I

C

P

C

T

j

T

stg

Parameter

Collector cutoff
current
Collector cutoff
current

2SD2138
2SD2138A
2SD2138

2SD2138A
Emitter cutoff current
Collector to emitter
voltage

2SD2138

2SD2138A

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Turn-off time

*

h

Rank classification

FE2

Rank Q P

h

FE2

2000 to 5000

4000 to 10000

CBO

CEO

EBO

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

off

=25˚C)

C

Ratings

60
80
60
80

5
4
2

15

2

150

–55 to +150

=25˚C)

VCE = 60V, IE = 0
VCE = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0

IC = 30mA, IB = 0

VCE = 4V, IC = 1A
VCE = 4V, IC = 2A
VCE = 4V, IC = 2A
IC = 2A, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 2A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

4.2±0.2

13.0±0.2

18.0±0.5
Solder Dip

C1.0

123

2.5±0.2 2.5±0.2

Internal Connection

B

min

60

80
1000
2000

2.5±0.2

0.65±0.1

1.05±0.10.35±0.1

0.55±0.1

typ

20

0.4
4

1.2±0.1

Unit: mm

5.0±0.1

1.010.0±0.2

90°

C1.0

2.25±0.2

0.55±0.1

1:Base
2:Collector
3:Emitter

MT4 Type Package

C

E

max

100
100
100
100
100

Unit

µA

µA

µA

V

10000

2.8

2.5

V
V

MHz

µs
µs

1

Po wer Transistors 2SD2138, 2SD2138A

PC—Ta IC—V

20

(1)

(2)

IC—V

TC=100˚C

(1) TC=Ta
(2) Without heat sink

=2.0W)

(P

C

BE

25˚C

–25˚C

)
W

(

C

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

6

5

)
A

(

4

C

3

2

Collector current I

1

0

04132

Base to emitter voltage VBE (V

VCE=4V

CE

6

5

)
A

(

4

C

3

2

IB=2mA

TC=25˚C

1.8mA

1.6mA

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

C

5

10

FE

TC=100˚C

4

10

3

10

25˚C

–25˚C

VCE=4V

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

)
pF

(

300

ob

100

30

10

Forward current transfer ratio h

2

10

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

)

Collector output capacitance C

V

CE(sat)—IC

IC/IB=250

3

TC=–25˚C

1

25˚C

100˚C

0.01 0.1 1 100.03 0.3 3

CB

)

IE=0
f=1MHz
T

=25˚C

C

Collector current IC (A

Cob—V

3

1

1 3 10 30 100

Collector to base voltage VCB (V

)

Area of safe operation (ASO) R

100

30

)

10

A

(

I

CP

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse
T

DC

10ms

=25˚C

C

t=1ms

2SD2138

2SD2138A

Collector to emitter voltage VCE (V

10000

)

1000

˚C/W

(
(t)

th

100

10

1

Thermal resistance R

0.1

–4

10

)

–3

10

2

—t

th(t)

Note: Rth was measured at Ta=25˚C and under natural convection.

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

–1

–2

10

Time t (s

1010

110

10

)

3

2

(1)
(2)

4

10