Panasonic 2SD2137A, 2SD2137 Datasheet

Po wer Transistors

2SD2137, 2SD2137A

Silicon NPN triple diffusion planar type

For power amplification
Complementary to 2SB1417 and 2SB1417A

Features

■

●

High forward current transfer ratio hFE which has satisfactory linearity

●

Low collector to emitter saturation voltage V

●

Allowing supply with the radial taping

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD2137
2SD2137A
2SD2137

2SD2137A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

60
80
60
80

6
5
3

15

2

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

4.2±0.2

13.0±0.2

18.0±0.5
Solder Dip

C1.0

123

2.5±0.2 2.5±0.2

2.5±0.2

0.65±0.1

1.05±0.10.35±0.1

0.55±0.1

1.2±0.1

Unit: mm

5.0±0.1

1.010.0±0.2

90°

C1.0

2.25±0.2

0.55±0.1

1:Base
2:Collector
3:Emitter

MT4 Type Package

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current

2SD2137
2SD2137A
2SD2137

2SD2137A
Emitter cutoff current
Collector to emitter
voltage

2SD2137

2SD2137A

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

C

Symbol

I

CES

I

CEO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0

IC = 30mA, IB = 0

VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 5V, IC = 0.2A, f = 10MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V

min

60
80
70
10

Rank Q P

h

FE1

70 to 150 120 to 250

Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.

typ

30

0.3

2.5

0.2

max

100
100
100
100
100

250

1.8

1.2

Unit

µA

µA

µA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD2137, 2SD2137A

PC—Ta IC—V

20

(1)

(2)

IC—V

TC=100˚C

25˚C

(1) TC=Ta
(2) Without heat sink

=2.0W)

(P

C

BE

–25˚C

)
W

(

C

15

10

5

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

6

5

)
A

(

4

C

3

2

Collector current I

1

VCE=4V

CE

6

5

)
A

(

4

C

3

2

Collector current I

1

0

012108264

)

Collector to emitter voltage VCE (V

hFE—I

1000

TC=100˚C

FE

300

25˚C

–25˚C

100

30

10

3

Forward current transfer ratio h

C

TC=25˚C

=100mA

I

B

90mA
80mA

70mA
60mA

50mA
40mA

30mA
20mA

10mA

VCE=4V

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

1000

)

300

MHz

(

T

100

30

10

Transition frequency f

V

CE(sat)—IC

3

1

0.01 0.1 1 100.03 0.3 3

TC=100˚C

25˚C

–25˚C

Collector current IC (A

fT—I

C

VCE=5V
f=10MHz
T

C

3

IC/IB=8

)

=25˚C

0

02.01.60.4 1.20.8

Base to emitter voltage VBE (V

Cob—V

1000

)
pF

(

300

ob

100

30

10

3

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)

)

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

ton, t

, tf — I

stg

100

30

)
µs

(

10

f

,t

stg

,t

on

t

stg

3

1

t

on

0.3
t

f

0.1

Switching time t

0.03

0.01
04132

Collector current IC (A

C

Pulsed tw=1ms
Duty cycle=1%

=10 (IB1=–IB2)

I

C/IB

=50V

V

CC

T

=25˚C

C

1

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

)

Area of safe operation (ASO)

100

30

)

10

A

(

I

CP

C

3

I

C

10ms

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

2SD2137

2SD2137A

)