Panasonic 2SD2074 Datasheet

Transistor

V

B

IB=1mA

R

on

= ✕1000(Ω)

f=1kHz
V=0.3V

1kΩ

V

A

V

V

VA–V

B

V

B

2SD2074

Silicon NPN epitaxial planer type

For low-frequency output amplification
For muting
For DC-DC converter

Features

■

●

Low collector to emitter saturation voltage V

●

Low ON resistance Ron.

●

High foward current transfer ratio hFE.

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse

*1

h

Rank classification

FE1

Rank R S T

h

FE1

200 ~ 350 300 ~ 500 400 ~ 800

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

*1

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

*3

R

on

Ratings

25
20
12

0.5

150

–55 ~ +150

.

CE(sat)

Unit

V
V
V

1

A
A

1

W
˚C
˚C

Conditions

VCB = 25V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A

*2

*2

IC = 0.5A, IB = 20mA
IC = 0.5A, IB = 50mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f= 1MHz

*3

Ron Measurement circuit

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

min

25
20
12

200

60

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

typ

max

0.13

200

10

1.0

*2

Pulse measurement

2.5±0.1

2.5±0.1

(HW type)

100

800

0.4

1.2

Unit: mm

0.5

4.5±0.114.5±0.5

Unit

nA

V
V
V

V
V

MHz

pF

Ω

1

Transistor

2SD2074

PC — Ta IC — V

1.2

)

W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

100

)

V

(

30

BE(sat)

10

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0

0 20016040 12080

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

3

Ta=–25˚C

1

0.01 0.1 1 100.03 0.3 3

C

25˚C

75˚C

Collector current IC (A

IC/IB=10

)

V

CE

1.2

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

0654132

)

Collector to emitter voltage VCE (V

hFE — I

1200

FE

1000

800

Ta=75˚C

600

400

200

Forward current transfer ratio h

25˚C

–25˚C

0

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IB=4.0mA

C

Ta=25˚C

3.5mA

3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

VCE=2V

)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

)

Collector current IC (A

400

350

)
MHz

300

(

T

250

200

150

100

Transition frequency f

50

0

–1 –3 –10 –30 –100

Emitter current IE (mA

CE(sat)

Ta=75˚C

25˚C

fT — I

— I

–25˚C

E

C

IC/IB=25

)

VCB=10V
Ta=25˚C

)

Cob — V

24

)

pF

(

20

ob

16

12

8

4

CB

Collector output capacitance C

0

1 3 10 30 100

Collector to base voltage VCB (V

2

IE=0
f=1MHz
Ta=25˚C

)

Ron — I

1000

300

)

100

Ω

(

on

ON resistance R

Ron measuring circuit

=1mA

I

B

30

10

3

1

0.3

0.1

0.01 0.1 1 100.03 0.3 3

Base current IB (mA

B

V

V

B

A

V

f=1kHz
V=0.3V

)