Panasonic 2SD2067 Datasheet

Transistor

2SD2067 (Tentative)

Silicon NPN epitaxial planer type

For low-frequency output amplification

Features

■

●

Darlington connection.

●

High foward current transfer ratio hFE.

●

Large peak collector current ICP.

●

High collector to emitter voltage V

●

Allowing supply with the radial taping.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

*

Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

*

P

C

T

j

T

stg

.

CEO

Ratings

–55 ~ +150

120
100

5
3
2
1

150

Unit

V
V
V
A

A
W
˚C
˚C

6.9±0.1

4.00.7 0.8

0.15

0.65 max.

+0.1

0.45

–0.05

2.5±0.5 2.5±0.5

Note: In addition to the

lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.

1.2±0.1

+

0.1

0.45

–

0.05

Internal Connection

B

1.05
±0.05 (1.45)

0.21.01.0

–0.05

+0.1

321

0.45

1:Emitter
2:Collector
3:Base
MT2 Type Package

0.65
max.

Unit: mm

2.5±0.1

0.5

4.5±0.114.5±0.5

2.5±0.1

(HW type)

C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage

*1

hFE Rank classification

Symbol

I

CBO

I

EBO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

V

BE(sat)

Rank Q R S

h

4000 ~ 10000 8000 ~ 20000 16000 ~ 40000

FE

≈200Ω

Conditions

min

typ max

VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0

*1

VCE = 10V, IC = 1A
IC = 1A, IB = 1mA
IC = 1A, IB = 1mA

*2

*2

*2

120
100

5

4000

*2

E

Unit

0.1

µA

1

µA

V
V
V

40000

1.5
2

V
V

Pulse measurement

1

Transistor

2SD2067

PC — Ta IC — V

1.2

)
W

(

1.0

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

)
V

(

100

BE(sat)

30

10

3

1

0.3

Base to emitter saturation voltage V

0.1

0.01 310.10.03 0.3

Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.

0 16040 12080 14020 10060

2

or more, and

Ambient temperature Ta (˚C

V

— I

BE(sat)

Ta=–25˚C

C

IC/IB=1000

25˚C

100˚C

Collector current IC (A

)

V

CE

3.0

2.5

)

A

(

2.0

C

1.5

1.0

150µA

120µA

Ta=25˚C

IB=180µA

90µA
60µA

)
V

(

CE(sat)

10

3

1

0.3

0.1

CE(sat)

25˚C

— I

Ta=100˚C

–25˚C

C

IC/IB=1000

Collector current I

0.5

0

0108264

)

Collector to emitter voltage VCE (V

hFE — I

5

10

FE

4

10

3

10

2

10

Forward current transfer ratio h

Ta=100˚C

25˚C

C

–25˚C

30µA

VCE=10V

0.03

0.01

Collector to emitter saturation voltage V

0.01 310.10.03 0.3

)

Collector current IC (A

Cob — V

60

)
pF

(

50

ob

40

30

20

10

CB

)

IE=0
f=1MHz
Ta=25˚C

Collector output capacitance C

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

0

1 3 10 30 100

Collector to base voltage VCB (V

)

Area of safe operation (ASO)

10

I

CP

3

I

C

)

1

A

(

C

0.3

0.1

0.03

0.01

Collector current I

0.003

0.001

0.1 1 10 1000.3 3 30

Collector to emitter voltage VCE (V

2

Single pulse
Ta=25˚C

t=10ms

t=1s

)