Panasonic 2SD2064 Datasheet

Po wer Transistors

2SD2064

Silicon NPN triple diffusion planar type

For high power amplification
Complementary to 2SB1371

Features

■

●

Satisfactory foward current transfer ratio hFE vs. collector cur­rent I

characteristics

●

●

●

●

■

C

Wide area of safe operation (ASO)
High transition frequency f

T

Optimum for the output stage of a HiFi audio amplifier
Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

=25˚C)

C

Ratings

120
120

5

10

6

70

3

150

–55 to +150

Unit

V
V
V
A
A

W

˚C
˚C

21.0±0.516.2±0.5

3.5 0.715.0±0.2

12.5
Solder Dip

15.0±0.3

11.0±0.2

φ3.2±0.1

2.0±0.2

1.1±0.1

5.45±0.3

10.9±0.5

321

TOP–3 Full Pack Package(a)

Unit: mm

5.0±0.2

3.2

2.0±0.1

0.6±0.2

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*

h

Rank classification

FE2

Rank Q S P

h

FE2

60 to 120 80 to 160 100 to 200

C

Symbol

I

CBO

I

EBO

h

FE1

*

h

FE2

h

FE3

V

BE

V

CE(sat)

f

T

C

ob

=25˚C)

Conditions

VCB = 120V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 4A
VCE = 5V, IC = 4A
IC = 4A, IB = 0.4A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz

min

20
60
20

typ

20
80

max

50
50

200

1.8

2.0

Unit

µA
µA

V
V

MHz

pF

1

Po wer Transistors 2SD2064

PC—Ta IC—V

80

)

(1)

70

W

(

C

60

50

40

30

20

(2)

10

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

(P

=3W)

C

V

CE(sat)—IC

TC=100˚C

25˚C

Collector current IC (A

)

IC/IB=10

–25˚C

)

CE

12

10

)
A

(

8

C

6

4

IB=500mA

400mA

300mA

200mA

150mA

100mA

T

C

Collector current I

2

0

012108264

Collector to emitter voltage VCE (V

hFE—I

C

1000

FE

300

TC=100˚C

100

25˚C

30

10

3

Forward current transfer ratio h

1

0.01 0.1 1 100.03 0.3 3

–25˚C

Collector current IC (A

=25˚C

50mA

10mA

VCE=5V

)

12

10

)
A

(

8

C

6

4

Collector current I

2

0

04132

)

Base to emitter voltage VBE (V

1000

)

300

MHz

(

T

100

30

10

3

Transition frequency f

1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

VCE=5V

fT—I

25˚C

C

100˚C

VCE=5V
f=1MHz
T

=25˚C

C

TC=–25˚C

Collector current IC (A

)

)

Cob—V

1000

)
pF

(

300

ob

100

30

10

3

Collector output capacitance C

1

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)
A

(

Collector current I

)

Area of safe operation (ASO)

100

30

I

CP

10

I

C

C

3

1

0.3

0.1

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

100ms

Non repetitive pulse

=25˚C

T

C

t=10ms

DC

)