Panasonic 2SD2052 Datasheet

Po wer Transistors

2SD2052

Silicon NPN triple diffusion planar type

For high power amplification
Complementary to 2SB1361

Features

■

●

Satisfactory foward current transfer ratio hFE vs. collector cur­rent I

characteristics

●

●

●

●

■

C

Wide area of safe operation (ASO)
High transition frequency f

T

Optimum for the output stage of a HiFi audio amplifier
Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

=25˚C)

C

Ratings

150
150

5

15

9

100

3

150

–55 to +155

Unit

V
V
V
A
A

W

˚C
˚C

21.0±0.516.2±0.5

3.5 0.715.0±0.2

12.5
Solder Dip

15.0±0.3

11.0±0.2

φ3.2±0.1

2.0±0.2

1.1±0.1

5.45±0.3

10.9±0.5

321

TOP–3 Full Pack Package(a)

Unit: mm

5.0±0.2

3.2

2.0±0.1

0.6±0.2

1:Base
2:Collector
3:Emitter

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*

h

Rank classification

FE2

Rank Q S P

h

FE2

60 to 120 80 to 160 100 to 200

C

Symbol

I

CBO

I

EBO

h

FE1

*

h

FE2

h

FE3

V

BE

V

CE(sat)

f

T

C

ob

=25˚C)

Conditions

VCB = 150V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
VCE = 5V, IC = 7A
IC = 7A, IB = 0.7A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz

min

20
60
20

typ

20

150

max

50
50

200

1.8

2.0

Unit

µA
µA

V
V

MHz

pF

1

Po wer Transistors 2SD2052

PC—Ta IC—V

120

)
W

(

100

C

80

60

40

20

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=3W)

(P

(1)

C

(2)
(3)

V

CE(sat)—IC

TC=100˚C

25˚C

–25˚C

Collector current IC (A

)

IC/IB=10

)

CE

20

16

)
A

(

C

12

8

Collector current I

4

0

012108264

IB=1000mA

900mA
800mA
700mA
600mA

500mA
400mA
300mA

200mA

100mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

TC=100˚C

100

30

10

Forward current transfer ratio h

3

1

0.1 1 10 1000.3 3 30

25˚C

–25˚C

Collector current IC (A

TC=25˚C

50mA

VCE=5V

)

20

16

)
A

(

C

12

8

Collector current I

4

0

02.42.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

V

TC=–25˚C

fT—I

25˚C

100˚C

C

VCE=5V
f=1MHz
T

=25˚C

C

Collector current IC (A

=5V

CE

)

)

Cob—V

10000

)
pF

(

3000

ob

1000

300

100

30

Collector output capacitance C

10

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)
A

(

Collector current I

)

Area of safe operation (ASO)

100

30

I

CP

10

I

C

C

3

1

0.3

0.1

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

100ms

Non repetitive pulse

=25˚C

T

C

t=10ms

DC

)