Panasonic 2SD2051 Datasheet

Po wer Transistors

10.0±0.2

5.5±0.2

7.5±0.2

16.7±0.3

0.7±0.1

14.0±0.5
Solder Dip

4.0

0.5

+0.2
–0.1

1.4±0.1

1.3±0.2

0.8±0.1

2.54±0.25

5.08±0.5
213

2.7±0.2

4.2±0.2

4.2±0.2

φ3.1±0.1

B

E

C

2SD2051

Silicon NPN epitaxial planar type Darlington

For low-frequency amplification

Features

■

●

High foward current transfer ratio h

●

Incorporating a built-in zener diode

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V
V
V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

FE

=25˚C)

C

Ratings

60±10
60±10

5

2.5

1.6
12

2.0

150

–55 to +150

Unit

V
V
V
A
A

W

˚C
˚C

Unit: mm

1:Base
2:Collector
3:Emitter

TO–220 Full Pack Package(a)

Internal Connection

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency

*

hFE Rank classification

Rank Q R S

h

4000 to 10000 8000 to 20000

FE

=25˚C)

C

Symbol

I

CBO

I

EBO

V

CBO

V

CEO

V

EBO

*

h

FE

V

CE(sat)

V

BE(sat)

f

T

16000 to 40000

Conditions

VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 1.0A
IC = 1.0A, IB = 1.0mA
IC = 1.0A, IB = 1.0mA
VCE = 10V, IC = 10mA, f = 200MHz

min

50
50

5

4000

200

typ max

1

1
70
70

40000

1.5

2.2

Unit

µA
µA

V
V
V

V
V

MHz

1

Po wer Transistors 2SD2051

PC—Ta IC—V

4

)
W

(

C

3

2

1

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

100

)
V

(

30

BE(sat)

10

3

TC=–25˚C

1

100˚C

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

V

BE(sat)—IC

Without heat sink

IC/IB=1000

25˚C

)

CE

1.2
=25˚C

T

C

1.0

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

012108264

)

Collector to emitter voltage VCE (V

6

10

FE

5

10

TC=100˚C

4

10

3

10

hFE—I

–25˚C

IB=100µA

C

VCE=10V

25˚C

90µA
80µA

70µA
60µA

50µA

40µA

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

20

)

18

pF

(

16

ob

14

12

10

Forward current transfer ratio h

2

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

)

Collector output capacitance C

V

CE(sat)—IC

IC/IB=1000

3

1

TC=–25˚C

100˚C

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

Cob—V

8

6

4

2

0

1 3 10 30 100

CB

25˚C

IE=0
f=1MHz
T

C

)

=25˚C

Collector to base voltage VCB (V

)

2