Panasonic 2SD2029 Datasheet

Po wer Transistors

2SD2029

Silicon NPN triple diffusion planar type

For high power amplification
Complementary to 2SB1347

Features

■

●

Satisfactory foward current transfer ratio hFE collector current I
characteristics

●

Wide area of safe operation (ASO)

●

High transition frequency f

●

Optimum for the output stage of a HiFi audio amplifier

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature

TC=25°C
Ta=25°C

T

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

=25˚C)

C

Ratings

160
160

5
20
12

120

3.5

150

–55 to +155

Unit

V
V
V
A
A

W

˚C
˚C

Unit: mm

20.0±0.5

C

6.010.0

26.0±0.520.0±0.5

1.5

2.5

1.5

Solder Dip

10.9±0.5

123

φ 3.3±0.2

4.02.0

2.0±0.3

3.0±0.3

1.0±0.2

5.45±0.3

5.0±0.3

3.0

3.0

2.0

1.5

2.7±0.3

0.6±0.2

1:Base
2:Collector
3:Emitter

TOP–3L Package

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Emitter cutoff current

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*

h

Rank classification

FE2

Rank Q S P

h

FE2

60 to 120 80 to 160 100 to 200

C

Symbol

I

CBO

I

EBO

h

FE1

*

h

FE2

h

FE3

V

BE

V

CE(sat)

f

T

C

ob

=25˚C)

Conditions

VCB = 160V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 8A
VCE = 5V, IC = 8A
IC = 8A, IB = 0.8A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz

min

20
60
20

typ

20

210

max

50
50

200

1.8

2.0

Unit

µA
µA

V
V

MHz

pF

1

Po wer Transistors 2SD2029

PC—Ta IC—V

200

)
W

(

C

150

100

50

Collector power dissipation P

0

0 16040 12080 14020 10060

)

10

V

(

3

CE(sat)

1

0.3

0.1

0.03

0.01

0.003

0.001

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) Without heat sink

=3.5W)

(P

(1)

(2)

C

(3)

Ambient temperature Ta (˚C

V

CE(sat)—IC

IC/IB=10

TC=100˚C

25˚C
–25˚C

Collector current IC (A

)

)

CE

20

16

)
A

(

C

12

Collector current I

8

4

0

012108264

IB=800mA

700mA

600mA

500mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

TC=100˚C

100

–25˚C

25˚C

30

10

Forward current transfer ratio h

3

1

0.1 1 10 1000.3 3 30

Collector current IC (A

TC=25˚C

400mA

300mA

200mA

100mA

50mA

VCE=5V

)

20

16

)
A

(

C

12

8

Collector current I

4

0

02.42.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

V

fT—I

25˚C

100˚C

C

VCE=5V
f=1MHz
T

C

TC=–25˚C

Collector current IC (A

CE

=25˚C

)

=5V

)

Cob—V

10000

)
pF

(

3000

ob

1000

300

100

30

Collector output capacitance C

10

1 3 10 30 100

Collector to base voltage VCB (V

2

CB

IE=0
f=1MHz

=25˚C

T

C

)
A

(

Collector current I

)

Area of safe operation (ASO)

100

30

I

CP

10

I

C

C

3

1

0.3

0.1

0.03

0.01
1 10 100 10003 30 300

Collector to emitter voltage VCE (V

100ms

Non repetitive pulse

=25˚C

T

C

t=10ms

DC

)